X-On Electronics has gained recognition as a prominent supplier of 2SA1579T106R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1579T106R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1579T106R ROHM

2SA1579T106R electronic component of ROHM
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Part No.2SA1579T106R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 120 V 50 mA 140MHz 200 mW Surface Mount UMT3
Datasheet: 2SA1579T106R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
336: USD 0.1213 ea
Line Total: USD 40.76 
Availability - 11093
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 336  Multiples: 1
Pack Size: 1

 2SA1579T106R More Buying Options & Price Grid(s)

Availability Price Quantity
95
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.2794
100 : USD 0.1463
1000 : USD 0.1331
3000 : USD 0.1067
9000 : USD 0.0968
24000 : USD 0.0946

11093
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 336
Multiples : 1
336 : USD 0.1213
517 : USD 0.0786
1000 : USD 0.0639
2000 : USD 0.0599

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1579T106R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1579T106R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SA1579 / 2SA1514K High-voltage Amplifier Transistor Datasheet (-120V,-50mA) llOutline Parameter Value SOT-323 SOT-346 V -120V CEO I -50mA C 2SA1579 2SA1514K (UMT3) (SMT3) llFeatures llInner circuit 1)High breakdown voltage. (BV =-120V) CEO 2)Complements the 2SC4102/2SC3906K llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width hFE ordering Part No. Package Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SA1579 2021 T106 180 8 3000 RS R (UMT3) SOT-346 2SA1514K 2928 T146 180 8 3000 RS R (SMT3) www.rohm.com 1/7 20151210 - Rev.003 2015 ROHM Co., Ltd. All rights reserved. 2SA1579 / 2SA1514K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -120 V CBO Collector-emitter voltage V -120 V CEO V Emitter-base voltage -5 V EBO I Collector current -50 mA C 2SA1579 200 *1 P Power dissipation mW D 2SA1514K 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I Collector cut-off current V = -100V - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB *2 Collector-emitter saturation voltage I = -10mA, I = -1mA V - - -500 mV C B CE(sat) h DC current gain V = -6V, I = -2mA 180 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 3.2 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. *2 Pulsed www.rohm.com 2/7 20151210 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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