2SA1579 / 2SA1514K High-voltage Amplifier Transistor Datasheet (-120V,-50mA) llOutline Parameter Value SOT-323 SOT-346 V -120V CEO I -50mA C 2SA1579 2SA1514K (UMT3) (SMT3) llFeatures llInner circuit 1)High breakdown voltage. (BV =-120V) CEO 2)Complements the 2SC4102/2SC3906K llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width hFE ordering Part No. Package Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SA1579 2021 T106 180 8 3000 RS R (UMT3) SOT-346 2SA1514K 2928 T146 180 8 3000 RS R (SMT3) www.rohm.com 1/7 20151210 - Rev.003 2015 ROHM Co., Ltd. All rights reserved. 2SA1579 / 2SA1514K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -120 V CBO Collector-emitter voltage V -120 V CEO V Emitter-base voltage -5 V EBO I Collector current -50 mA C 2SA1579 200 *1 P Power dissipation mW D 2SA1514K 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I Collector cut-off current V = -100V - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB *2 Collector-emitter saturation voltage I = -10mA, I = -1mA V - - -500 mV C B CE(sat) h DC current gain V = -6V, I = -2mA 180 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 3.2 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. *2 Pulsed www.rohm.com 2/7 20151210 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.