X-On Electronics has gained recognition as a prominent supplier of 2SA1579U3T106R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1579U3T106R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1579U3T106R ROHM

2SA1579U3T106R electronic component of ROHM
2SA1579U3T106R ROHM
2SA1579U3T106R Bipolar Transistors - BJT
2SA1579U3T106R Semiconductors

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See Product Specifications
Part No. 2SA1579U3T106R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Transistor for high-volt amp
Datasheet: 2SA1579U3T106R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4862 ea
Line Total: USD 0.49 
Availability - 5820
Ship by Mon. 24 Feb to Wed. 26 Feb
MOQ: 1  Multiples: 1
Pack Size: 1

 2SA1579U3T106R More Buying Options & Price Grid(s)

Availability Price Quantity
5820
Ship by Mon. 24 Feb to Wed. 26 Feb
MOQ : 1
Multiples : 1
1 : USD 0.4862
10 : USD 0.2988
100 : USD 0.144
1000 : USD 0.1199
3000 : USD 0.0913
9000 : USD 0.0847
24000 : USD 0.0814
45000 : USD 0.0803

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1579U3T106R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1579U3T106R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SARA41C / 2SA1579U3 Datasheet High-voltage Amplifier Transistor (-120V, -50mA) llOutline Parameter Value SOT-23 SOT-323 V -120V CEO I -50mA C 2SARA41C 2SA1579U3 (SST3) (UMT3) llFeatures llInner circuit 1)High breakdown voltage. (BV =-120V) CEO 2)Complements the 2SCRC41C/2SC4102U3 llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 2SARA41C 2924 T116 180 8 3000 K1 (SST3) SOT-323 2SA1579U3 2021 T106 180 8 3000 R (UMT3) www.rohm.com 1 / 7 20181227 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. 2SARA41C / 2SA1579U3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -120 V CBO Collector-emitter voltage V -120 V CEO V Emitter-base voltage -5 V EBO I Collector current -50 mA C *1 P 200 mW D 2SARA41C *2 P Power dissipation 350 mW D P 2SA1579U3 200 mW D Junction temperature T 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -100V Collector cut-off current - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -500 mV CE(sat) C B h V = -6V, I = -2mA DC current gain 180 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 3.2 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20181227 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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ROHM Semiconductor

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