X-On Electronics has gained recognition as a prominent supplier of 2SA1774EBTLQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1774EBTLQ Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1774EBTLQ ROHM

2SA1774EBTLQ electronic component of ROHM
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See Product Specifications
Part No.2SA1774EBTLQ
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 150 mA 140MHz 150 mW Surface Mount EMT3F (SOT-416FL)
Datasheet: 2SA1774EBTLQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2134 ea
Line Total: USD 0.21 
Availability - 2783
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 2SA1774EBTLQ More Buying Options & Price Grid(s)

Availability Price Quantity
2783
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2134
10 : USD 0.143
100 : USD 0.066
1000 : USD 0.0594
3000 : USD 0.0451
24000 : USD 0.044
45000 : USD 0.0407
99000 : USD 0.0385

7129
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 472
Multiples : 1
472 : USD 0.0862
508 : USD 0.0801
1000 : USD 0.0733
2000 : USD 0.073
3000 : USD 0.0626
6000 : USD 0.0593

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1774EBTLQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1774EBTLQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) llOutline Parameter Value SOT-723 SOT-416FL V -50V CEO I -150mA C 2SA2029 2SA1774EB (VMT3) (EMT3F) llFeatures SOT-416 SOT-323FL 1)Excellent h linearity. FE 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC4081UB/2SC4081U3/2SC2412K (EMT3) (UMT3F) llApplication SOT-323 SOT-346 GENERAL PURPOSE SMALL SIGNAL AMPLIFIER 2SA1576U3 2SA1037AK (UMT3) (SMT3) llInner circuit 2SA2029/2SA1774EB/2SA1576UB 2SA1774/2SA1576U3/2SA1037AK llPackaging specifications Package Taping Reel size Tape width Quantity hFE Part No. Package Marking (pcs) size code (mm) (mm) rank 2SA2029 SOT-723 1212 T2L 180 8 8000 QR F 2SA1774EB SOT-416FL 1616 TL 180 8 3000 QR F 2SA1774 SOT-416 1616 TL 180 8 3000 QR F 2SA1576UB SOT-323FL 2021 TL 180 8 3000 QR F 2SA1576U3 SOT-323 2021 T106 180 8 3000 QR F 2SA1037AK SOT-346 2928 T146 180 8 3000 QR F www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/9 20200109 - Rev.004 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO Collector-emitter voltage V -50 V CEO V Emitter-base voltage -6 V EBO I -150 mA C Collector current *1 I -200 mA CP 2SA2029 150 2SA1774EB 150 2SA1774 150 *2 P Power dissipation mW D 2SA1576UB 200 2SA1576U3 200 2SA1037AK 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -6 - - V EBO E I Collector cut-off current V = -60V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B h DC current gain V = -6V, I = -1mA 120 - 390 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. www.rohm.com 2/12 20200109 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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