X-On Electronics has gained recognition as a prominent supplier of 2SA1797T100P Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1797T100P Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1797T100P ROHM

2SA1797T100P electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SA1797T100P
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 2 A 200MHz 2 W Surface Mount MPT3
Datasheet: 2SA1797T100P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.2271 ea
Line Total: USD 227.1

Availability - 950
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
501
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.6222
10 : USD 0.5359
100 : USD 0.3795
500 : USD 0.3266
1000 : USD 0.2852
2000 : USD 0.2576
5000 : USD 0.2519
10000 : USD 0.2438
25000 : USD 0.2415

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SA1797T100P from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1797T100P and other electronic components in the Bipolar Transistors - BJT category and beyond.

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+ + Power Transistor ( 50V, 3A) 2SA1797 z Features z Dimensions (Unit : mm) 1) Low saturation voltage. MPT3 VCE (sat) = 0.35V (Max.) at IC / IB = 1A / 50mA. 2) Excellent DC current gain characteristics. 4.5 1.5 1.6 3) Complements the 2SC4672. (1) (2) (3) z Packaging specifications 0.4 0.5 0.4 0.4 Type 2SA1797 1.5 1.5 3.0 (1)Base Package MPT3 (2)Collector hFE PQ (3)Emitter Marking AG Code T100 Basic ordering unit (pieces) 1000 Denotes hFE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V 1 3 A (DC) Collector current IC 6 A (Pulse) 0.5 2 Collector power 2SA1797 PC W dissipation 2 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=10ms 2 When mounted on a 40 40 0.7mm ceramic board. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 V IC=50A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=50A Collector cutoff current ICBO 0.1 A VCB=50V Emitter cutoff current IEBO 0.1 A VEB=5V Collector-emitter saturation voltage VCE(sat) 0.15 0.35 V IC/IB=1A/50mA hFE1 82 270 VCE/IC=2V/0.5A DC current transfer ratio hFE2 45 VCE/IC=2V/1.5A Transition frequency fT 200 MHz VCE=2V, IE=0.5A, f=100MHz Output capacitance Cob 36 pF VCB=10V, IE=0A, f=1MHz Measured using pulse current www.rohm.com 2009.04 - Rev.C 1/2 c 2009 ROHM Co., Ltd. All rights reserved. 1.0 2.5 0.5 4.0Ta=25C Ta=25C 2SA1797 Data Sheet z Electrical characteristic curves 2.0 5000 10 VCE=2V Ta=25C VCE=2V 5 1.8 2000 2 1.6 1000 1 1.4 0.5 500 1.2 0.2 200 1 0.1 100 0.05 800m 50 0.02 600m 0.01 400m 20 5m 200m 10 2m 0 1m 5 011 23 45 67 8 90 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -1m -5m -0.02 -0.1 -0.5 -2 -5-10 -2m -0.01 -0.05 -0.2 -1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded EmitterOutput Fig.3 DC Current Gain vs. Fig.2 Grounded Emitter Propagation Characteristics Collector Current Characteristics -1 10 10ms lC/lB=20 -0.5 100ms 1ms 1 -0.2 DC -0.1 0.1 -0.05 -0.02 0.01 Ta=25C Single non repetitive pulse Mounted on epoxy board -0.01 t 12mm15mm 0.8mm -1m -5m -0.02 -0.1 -0.5 -2 -5-10 0.001 -2m -0.01 -0.05 -0.2 -1 0.1 1 10 100 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current Fig.5 Safe Operating Area www.rohm.com 2009.04 - Rev.C 2/2 c 2009 ROHM Co., Ltd. All rights reserved. Ta=40C Ta=40C Ta=100C Ta=100C 4mA 3mA 2mA 1mA 6mA 5mA 8mA 7mA 9mA lB=10mA Ta=100C Ta=25C C Ta=40 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : lC (A) COLLECTOR CURRENT : lC (A) COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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