2SA1952 Datasheet High-speed Switching Transistor (-60V,-5A) llOutline Parameter Value CPT V -60V CEO I -5A C 2SA1952 SOT-428 llFeatures llInner circuit 1)High speed switching. 2)Low V CE(sat) (Max. -0.3V at I /I =-3/-0.15A) C B 3)Wide SOA. (safe operating area) 4)Complements the 2SC5103. llApplication HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SA1952 CPT 6595 TL 330 16 2500 A1952 llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -100 V CBO V Collector-emitter voltage -60 V CEO V Emitter-base voltage -5 V EBO I -5 A C Collector current *1 I -10 A CP *2 P 1 W D Power dissipation *3 P 10 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SA1952 Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. I = -3A, I = -300mA C B V - - Collector-emitter voltage -60 V CEO(SUS) L = 1mH Collector-base breakdown BV I = -50A -100 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -60 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -100V Collector cut-off current - - -10 A CBO CB I V = -5V Emitter cut-off current - - -10 A EBO EB V 1 I = -3A, I = -150mA - - -300 mV CE(sat) C B Collector-emitter saturation voltage *4 V 2 I = -4A, I = -200mA - - -500 mV CE(sat) C B *4 V 1 I = -3A, I = -150mA - - -1.2 V BE(sat) C B Base-emitter saturation voltage *4 V 2 I = -4A, I = -200mA - - -1.5 V BE(sat) C B *4 V = -2V, I = -1A 82 150 270 h 1 CE C FE DC current gain - *4 V = -2V, I = -3A 40 - - h 2 CE C FE V = -10V, I = 0.5A, CE E *4 Transition frequency - 80 - MHz f T f = 30MHz V = -10V, I = 0A, CB E Output capacitance C - 130 - pF ob f = 1MHz I = -3A, Turn-on delay time t - - 0.3 s on C I = -150mA, B1 I = 150mA, B2 Storage time t - - 1.5 s stg V -30V, CC R = 10 L t Fall time - - 0.3 s f See test circuit hFE values are calssified as follows : rank P Q - - - h 1 82-180 120-270 - - - FE *1 t=100ms *2 Ta=25 *3 Tc=25 *4 Pulsed www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.