X-On Electronics has gained recognition as a prominent supplier of 2SA2029FHAT2LR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2029FHAT2LR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2029FHAT2LR ROHM

2SA2029FHAT2LR electronic component of ROHM
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See Product Specifications
Part No.2SA2029FHAT2LR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS DIGITAL PNP
Datasheet: 2SA2029FHAT2LR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4322 ea
Line Total: USD 0.43

Availability - 3821
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15173
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3691
10 : USD 0.2588
100 : USD 0.1069
1000 : USD 0.0701
2500 : USD 0.0679
8000 : USD 0.0575
24000 : USD 0.0564
48000 : USD 0.0529
96000 : USD 0.0517

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2029FHAT2LR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2029FHAT2LR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA2029 FHA Datasheet General Purpose Transistor (-50V, -150mA) AEC-Q101 Qualified llOutline SOT-723 Parameter Value SC-105AA V -50V CEO I -150mA C VMT3 llFeatures llInner circuit 1)Excellent h linearity. FE 2)Complements the 2SC5658 FHA. llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SA2029 FHA 1212 T2L 180 8 8000 F (VMT3) www.rohm.com 1/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SA2029 FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I -150 mA C Collector current *1 I -200 mA CP *2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 390 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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