X-On Electronics has gained recognition as a prominent supplier of 2SA2030T2L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2030T2L Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2030T2L ROHM

2SA2030T2L electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SA2030T2L
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 500 mA 260MHz 150 mW Surface Mount VMT3
Datasheet: 2SA2030T2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1059 ea
Line Total: USD 0.53

Availability - 7760
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
7760
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1059
50 : USD 0.0942
150 : USD 0.0884
500 : USD 0.084
2500 : USD 0.0805
5000 : USD 0.0787

21518
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4956
10 : USD 0.3933
100 : USD 0.2208
1000 : USD 0.1495
2500 : USD 0.1472
8000 : USD 0.1265
48000 : USD 0.123
96000 : USD 0.1219

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SA2030T2L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2030T2L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA2030 / 2SA2018 / 2SA2119K Datasheet Low frequency transistor(-12V, -500mA) llOutline Parameter Value SOT-723 SOT-416 V -12V CEO I -500mA C 2SA2030 2SA2018 (VMT3) (EMT3) llFeatures SOT-346 1)High current. 2)Collector-Emitter saturation voltage is low. V 250mA at I =-200mA/I =-10mA CE(sat) C B 2SA2119K (SMT3) llApplication LOW FREQUENCY AMPLIFIER, DRIVER llInner circuit 2SA2030 2SA2018/2SA2119K llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SA2030 1212 T2L 180 8 8000 BW (VMT3) SOT-416 2SA2018 1616 TL 180 8 3000 BW (EMT3) SOT-346 2SA2119K 2928 T146 180 8 3000 BW (SMT3) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/8 20150910 - Rev.003 2SA2030 / 2SA2018 / 2SA2119K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO Collector-emitter voltage V -12 V CEO V Emitter-base voltage -6 V EBO I -500 mA C Collector current *1 I -1 A CP 2SA2030 150 *2 P Power dissipation 2SA2018 150 mW D 2SA2119K 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E Collector cut-off current I V = -15V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -200mA, I = -10mA - -100 -250 mV CE(sat) C B h DC current gain V = -2V, I = -10mA 270 - 680 - FE CE C V = -2V, I = 10mA, CE E f Transition frequency - 260 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 6.5 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20150910 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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