2SA2048K Transistor Medium power transistor (30V, 1.0A) 2SA2048K External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 1.0A) SMT3 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and 1.6 capacitance load. 2.8 4) Complements the 2SC5730K (1) Emitter (2) Base 0.3Min. Each lead has same dimensions (3) Collector Abbreviated symbol : UL Applications Small signal low frequency amplifier High speed switching Structure PNP Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code T146 Basic ordering unit (pieces) 3000 2SA2048K Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 1.0 A Collector current 1 ICP 2.0 A 2 Power dissipation PC 200 mW Junction temperature Tj 150 C Range of storage temperature Tstg 55~+150 C 1 Pw=10ms 2 Each terminal mounted on a recommended land 1/3 0.4 0.15 ( ) 3 (2) (1) 0.8 0.95 0.95 1.1 1.9 2.92SA2048K Transistor Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 VIC= 100 A Collector-emitter breakdown voltage BVCEO 30 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 100 A Collector cut-off current ICBO 1.0 A VCB= 20V Emitter cut-off current IEBO 1.0 A VEB= 4V Collector-emitter saturation voltage VCE (sat) 150 300 mV IC= 500mA, IB= 50mA DC current gain hFE 120 390 VCE= 2V, IC= 100mA Transition frequency fT 350 MHz VCE= 10V, IE=100mA, f=10MHz Collector output capacitance Cob 10 pF VCB= 10V, IE=0mA, f=1MHz IC= 1.0A Turn-on time Ton 30 ns IB1= 100mA Storage time Tstg 100 ns IB2=100mA Fall time Tf 20 ns VCC= 25V hFE RANK QR 120270 180390 Electrical characteristic curves 10 1000 1000 Ta=25C VCE= 2V VCC= 25V 500us 1ms IC/IB=10/1 1 100 Tstg Ta=125C 0.1 100 10ms Tf Ta=25C 100ms Ton Ta=40C DC 10 0.01 Single non repetitive Pulse 10 1 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Switching Time Fig.1 Safe Operating Area Fig.3 DC Current Gain vs. Collector Current () 1000 10 10 Ta=25C IC/IB=10/1 Ta=25C VCE= 5V 100 1 1 VCE= 3V IC/IB=100/1 VCE= 2V Ta=125C IC/IB=20/1 Ta=25C IC/IB=10/1 Ta=40C 10 0.1 0.1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Collector Current () Voltage vs. Voltage vs. Collector Current () Collector Current () 2/3 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE