X-On Electronics has gained recognition as a prominent supplier of 2SA2071T100Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2071T100Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2071T100Q ROHM

Hot 2SA2071T100Q electronic component of ROHM
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See Product Specifications
Part No.2SA2071T100Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANSISTOR 60V3A PNP CPT3;HI VLT DISCHRG
Datasheet: 2SA2071T100Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
85: USD 0.4793 ea
Line Total: USD 40.74 
Availability - 117917
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 85  Multiples: 1
Pack Size: 1
Availability Price Quantity
956
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9207
10 : USD 0.6545
100 : USD 0.44
500 : USD 0.3564
1000 : USD 0.2893
2000 : USD 0.2761
5000 : USD 0.2673
10000 : USD 0.2651
25000 : USD 0.2596

1940
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 345
Multiples : 1
345 : USD 1.1339

117917
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 85
Multiples : 1
85 : USD 0.4793
123 : USD 0.3315
500 : USD 0.278
1000 : USD 0.2357
2000 : USD 0.234
4000 : USD 0.2292
8000 : USD 0.221
16000 : USD 0.2145

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
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We are delighted to provide the 2SA2071T100Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2071T100Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA2071 Datasheet Middle Power transistor (-60V, -3A) llOutline SOT-89 Parameter Value SC-62 V -60V CEO I -3A C MPT3 llFeatures llInner circuit 1)High speed switching. 2)Low saturation voltage. (Typ.:-200mV at I =-2A, l =-0.2A) C B 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SC5824 llApplication LOW FREQUENCY AMPLIFIER,HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SA2071 4540 T100 180 12 1000 UN (MPT3) www.rohm.com 1/6 20150810 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 2SA2071 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -60 V CEO Emitter-base voltage V -6 V EBO I -3 A C Collector current *1 I -6 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -60 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -40V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage I = -2A, I = -0.2A - -200 -500 mV V C B CE(sat) h DC current gain V = -2V, I = -100mA 120 - 270 - FE CE C V = -10V, I = 100mA, CE E *4 Transition frequency - 180 - MHz f T f = 10MHz V = -10V, I = 0A, CB E C Output capacitance - 50 - pF ob f = 1MHz I = -3A, C t Turn-On time - 20 - ns on I = -300mA, B1 I = 300mA, B2 t Storage time - 150 - ns stg V -25V, CC R = 8.3 L t Fall time - 20 - ns f See test circuit hFE values are calssified as follows : rank Q - - - - h 120-270 - - - - FE *1 Pw10s duty10% *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). *4 Pulsed www.rohm.com 2/6 20150810 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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