High voltage discharge, High speed switching, Low Noise ( 60V, 3A) 2SA2072 Features Dimensions (Unit : mm) 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. CPT3 (SC-63) : (Typ. 200mV at IC = 2.0A, IB = 200mA) <SOT-428> 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. Applications High speed switching, Low noise (1) Base (2) Collector (3) Emitter Structure Abbreviated symbol : A2072 PNP silicon epitaxial planar transistor Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 2500 2SA2072 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V VCEO V Collector-emitter voltage 60 VEBO V Emitter-base voltage 6 DC IC A 3 Collector current 1 Pulsed ICP A 6 2 W 1.0 PC Power dissipation 3 W 10.0 Junction temperature tj C 150 Range of storage temperature tstg 55 to 150 C 1 Pw=100ms 2 Ta=25C 3 Tc=25C www.rohm.com c 2012.07 - Rev.C 2012 ROHM Co., Ltd. All rights reserved. 1/3 Not Recommended for New Designs 2SA2072 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Condition Collector-emitter breakdown voltage BVCEO 60 V IC = 1mA BVCBO V Collector-base breakdown voltage 60 IC = 100A BVEBO V Emitter-base breakdown voltage 6 IE = 100A Collector cut-off current ICBO 1.0 A VCB = 20V IEBO 1.0 A Emitter cut-off current VEB = 4V 1 IC = 2A Collector-emitter saturation voltage VCE (sat) 200 500 mV IB = 0.2A VCE = 2V DC current gain hFE 270 120 IC = 100mA VCE = 10V 1 Transistor frequency fT 180 MHz IE =100mA f =10MHz VCB = 10V Collector output capacitance Cob 50 pF IE =0mA f =1MHz 2 IC = 3A Turn-on time ton ns 20 IB1 = 300mA 2 Storage time tstg ns 150 IB2 =300mA 2 Fall time tf 20 ns VCC 25V 1 Non repetitive pulse 2 See switching characteristics measurement circuits hFE RANK Q 120270 Electrical characteristics curves 200 10 1000 VCE=2V Ta=25C IB=1000A 900A VCE=5V 160 800A VCE=3V 1 100 700A VCE=2V 120 600A 25C 500A 125C 40C 80 400A 0.1 10 300A 200A 40 100A 0.01 1 0A 0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0.001 0.01 0.1 1 10 0 0 1234 5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter propagation Fig.3 DC current gain Fig.1 Typical output characteristics characteristics vs.collector current ( ) 1000 1 1 Ta=25C IC/Ib=10/1 Ta=25C 125C 125C 25C 0.1 100 40C Ic/Ib=20/1 25C 0.1 Ic/Ib=10/1 40C 0.01 10 0.001 0.01 1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage Fig.4 DC current gain vs.collector current ( ) vs.collector current ( ) vs.collector current ( ) www.rohm.com c 2012.07 - Rev.C 2012 ROHM Co., Ltd. All rights reserved. 2/3 Not Recommended for New Designs COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR CURRENT : IC(A) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)