X-On Electronics has gained recognition as a prominent supplier of 2SA2088T106Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2088T106Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2088T106Q ROHM

2SA2088T106Q electronic component of ROHM
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Part No.2SA2088T106Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP BJT PNP 60V 0.5A 3PIN
Datasheet: 2SA2088T106Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4367 ea
Line Total: USD 0.44 
Availability - 510
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
510
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.286
100 : USD 0.1441
1000 : USD 0.1232
3000 : USD 0.0957
9000 : USD 0.0858

6918
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 160
Multiples : 1
160 : USD 0.2552
200 : USD 0.2373
500 : USD 0.1902
1000 : USD 0.1707
2000 : USD 0.1613
3000 : USD 0.1457
6000 : USD 0.1379

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2088T106Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2088T106Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA2088 Datasheet Medium power transistor (-60V, -0.5A) llOutline Parameter Value UMT3 V -60V CEO I -0.5A C SOT-323 SC-70 llFeatures 1)High speed switching. llInner circuit (Tf:Typ.:60ns at I =-500mA) C 2)Low saturation voltage, typically (Typ.:-150mV at I =-100mA, I =-10mA) C B 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SC5876 llApplication SMALL SIGNAL LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SA2088 UMT3 2021 T106 180 8 3000 VM www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.2SA2088 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -60 V CEO Emitter-base voltage V -6 V EBO I -0.5 A C Collector current *1 I -1.0 A CP *2 Power dissipation P 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -60 - - V CEO C voltage Emitter-base breakdown voltage BV I = -100A -6 - - V EBO E I Collector cut-off current V = -40V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -150 -500 mV CE(sat) C B h DC current gain V = -2V, I = -50mA 120 - 270 - FE CE C V = -10V, I = 100mA, CE E *3 Transition frequency - 400 - MHz f T f = 100MHz V = -10V, I = 0mA, CB E C Output capacitance - 10 - pF ob f = 1MHz I = -500mA, C Turn-On time t - 35 - ns on I = -50mA, B1 I = 50mA, B2 Storage time t - 100 - ns stg V -25V, CC R = 50 L t Fall time - 60 - ns f See test circuit hFE values are calssified as follows : rank Q - - - - hFE 120-270 - - - - *1 Pw=10ms,Single pulse *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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