X-On Electronics has gained recognition as a prominent supplier of 2SA2088U3T106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2088U3T106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2088U3T106 ROHM

2SA2088U3T106 electronic component of ROHM
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Part No.2SA2088U3T106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP -60V VCEO -0.5A SOT-323
Datasheet: 2SA2088U3T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3806 ea
Line Total: USD 0.38 
Availability - 2293
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2293
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3806
10 : USD 0.2343
100 : USD 0.1122
1000 : USD 0.0902
3000 : USD 0.0792
9000 : USD 0.0693
24000 : USD 0.066
45000 : USD 0.0649
99000 : USD 0.0627

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2088U3T106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2088U3T106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA2088U3 Medium power transistor (-60V, -0.5A) Datasheet llOutline SOT-323 Parameter Value SC-70 V -60V CEO I -500mA C UMT3 llFeatures llInner circuit 1)High speed switching. (Tf:Typ.:60ns at I =-500mA) C 2)Low saturation voltage, typically (Typ.:-150mV at I =-100mA, I =-10mA) C B 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SC5876U3 llApplication SMALL SIGNAL LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 2SA2088U3 2021 T106 180 8 3000 VM (UMT3) www.rohm.com 1/6 20180614 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.2SA2088U3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -60 V CEO Emitter-base voltage V -6 V EBO I -500 mA C Collector current *1 I -1.0 A CP *2 Power dissipation P 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -60 - - V CEO C voltage Emitter-base breakdown voltage BV I = -100A -6 - - V EBO E I Collector cut-off current V = -40V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -150 -500 mV CE(sat) C B h DC current gain V = -2V, I = -50mA 120 - 270 - FE CE C V = -10V, I = 100mA, CE E *3 Transition frequency - 400 - MHz f T f = 100MHz V = -10V, I = 0mA, CB E C Output capacitance - 10 - pF ob f = 1MHz I = -500mA, C Turn-On time t - 35 - ns on I = -50mA, B1 I = 50mA, B2 Storage time t - 100 - ns stg V -25V, CC R = 50 L t Fall time - 60 - ns f See test circuit hFE values are calssified as follows : rank Q - - - - hFE 120-270 - - - - *1 Pw=10ms,Single pulse *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 20180614 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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