Medium power transistor ( 60V, 0.5A) 2SA2090 Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) TSMT3 2) Low saturation voltage, typically. (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5868. (1) Base Each lead has same dimensioins (2) Emitter Applications (3) Collector Abbreviated symbol : VM High speed switching, Low noise Structure PNP Silicon epitaxial planar Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 3000 2SA2090 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 0.5 A Collector current 1 ICP 1.0 A 2 Power dissipation PC 500 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Pw=10ms 2 Each terminal mounted on a recommended land. www.rohm.com 2011.03 - Rev.B 1/3 c 2011 ROHM Co., Ltd. All rights reserved. 2SA2090 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 60 V IC= 1mA Collector-base breakdown voltage V IC= 100mA BVCBO 60 BVEBO 6 V Emitter-base breakdown voltage IE= 100A Collector cut-off current A VCB= 60V ICBO 1.0 Emitter cut-off current A VEB= 4V IEBO 1.0 Collector-emitter saturation voltage VCE(sat) 300 IC= 100mA, IB= 10mA 150 mV DC current gain 120 270 VCE= 2V, IC= 50mA hFE Transition frequency fT 400 MHz VCE= 10V, IE=100mA, f=10MHz 1 pF Collector output capacitance VCB= 10V, IE=0mA, f=1MHz 10 Cob Turn-on time ns Ton 35 IC= 500mA, IB1= 50mA Storage time Tstg 100 ns IB2=50mA ns Fall time 1 Tf 60 VCC 25V 1 Measured using pulse current hFE RANK Q 120-270 Electrical characteristic curves 100 1000 1000 VCE=2V 400A Ta=25C IB=450A VCC=25V 350A Ta=100C 80 300A Tstg 250A 60 200A Ta=40C 100 100 Tf Ta=25C 40 150A Ton 100A 20 50A 0A 0 10 10 01 2 3 4 5 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Typical output characteristics Fig.2 Switching Time Fig.3 DC current gain vs. collector current ( ) 1000 10 10 Ta=25C IC/IB=10/1 Ta=25C VCE=5V 1 1 VCE=2V IC/IB=100/1 100 VCE=3V 125C 0.1 0.1 25C IC/IB=20/1 IC/IB=10/1 40C 0.01 0.01 10 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage Fig.4 DC current gain vs. collector vs. collector current ( ) vs. collector current () current () www.rohm.com 2011.03 - Rev.B 2/3 c 2011 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION SWITCHING TIME (ns) VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat)(V)