X-On Electronics has gained recognition as a prominent supplier of 2SA2090TLQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2090TLQ Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2090TLQ ROHM

2SA2090TLQ electronic component of ROHM
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Part No.2SA2090TLQ
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT TRNSISTR 60V.5A PNP HI VOLT DSCHRG
Datasheet: 2SA2090TLQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
667: USD 0.1473 ea
Line Total: USD 98.25 
Availability - 5810
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 667  Multiples: 1
Pack Size: 1
Availability Price Quantity
5810
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 667
Multiples : 1
667 : USD 0.1473
1000 : USD 0.1425
2500 : USD 0.1383
5000 : USD 0.1346

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Package Case
Brand
Dc Collectorbase Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2090TLQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2090TLQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Medium power transistor ( 60V, 0.5A) 2SA2090 Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) TSMT3 2) Low saturation voltage, typically. (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5868. (1) Base Each lead has same dimensioins (2) Emitter Applications (3) Collector Abbreviated symbol : VM High speed switching, Low noise Structure PNP Silicon epitaxial planar Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 3000 2SA2090 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 0.5 A Collector current 1 ICP 1.0 A 2 Power dissipation PC 500 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Pw=10ms 2 Each terminal mounted on a recommended land. www.rohm.com 2011.03 - Rev.B 1/3 c 2011 ROHM Co., Ltd. All rights reserved. 2SA2090 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 60 V IC= 1mA Collector-base breakdown voltage V IC= 100mA BVCBO 60 BVEBO 6 V Emitter-base breakdown voltage IE= 100A Collector cut-off current A VCB= 60V ICBO 1.0 Emitter cut-off current A VEB= 4V IEBO 1.0 Collector-emitter saturation voltage VCE(sat) 300 IC= 100mA, IB= 10mA 150 mV DC current gain 120 270 VCE= 2V, IC= 50mA hFE Transition frequency fT 400 MHz VCE= 10V, IE=100mA, f=10MHz 1 pF Collector output capacitance VCB= 10V, IE=0mA, f=1MHz 10 Cob Turn-on time ns Ton 35 IC= 500mA, IB1= 50mA Storage time Tstg 100 ns IB2=50mA ns Fall time 1 Tf 60 VCC 25V 1 Measured using pulse current hFE RANK Q 120-270 Electrical characteristic curves 100 1000 1000 VCE=2V 400A Ta=25C IB=450A VCC=25V 350A Ta=100C 80 300A Tstg 250A 60 200A Ta=40C 100 100 Tf Ta=25C 40 150A Ton 100A 20 50A 0A 0 10 10 01 2 3 4 5 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Typical output characteristics Fig.2 Switching Time Fig.3 DC current gain vs. collector current ( ) 1000 10 10 Ta=25C IC/IB=10/1 Ta=25C VCE=5V 1 1 VCE=2V IC/IB=100/1 100 VCE=3V 125C 0.1 0.1 25C IC/IB=20/1 IC/IB=10/1 40C 0.01 0.01 10 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage Fig.4 DC current gain vs. collector vs. collector current ( ) vs. collector current () current () www.rohm.com 2011.03 - Rev.B 2/3 c 2011 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION SWITCHING TIME (ns) VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat)(V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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