2SA2092TLQ ROHM

0~0.1 1A / 60V Bipolar transistor 2SA2092 Features Dimensions (Unit : mm) 1) High speed switching. (tf : Typ. : 30ns at IC = 1A) TSMT3 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 1.0MAX 2.9 3) Strong discharge resistance for inductive load and 0.85 0.7 capacitance load. 0.4 4) Low switching noise. ( ) 3 Applications ( ) ( ) 1 2 High-speed switching, low frequency amplification 0.95 0.95 0.16 (1) Base 1.9 (2) Emitter Each lead has same dimensions (3) Collector Abbreviated symbol : VN Structure PNP epitaxial planar silicon transistor Packaging specifications Package TSMT3 Packaging type Taping TL Code Part No. Basic ordering unit (pieces) 3000 2SA2092 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V DC IC 1 A Collector current 1 ICP 2 A PULSE 2 Power dissipation PC 500 mW Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw=10ms 2 Each terminal mounted on a recommended land www.rohm.com 2011.03 - Rev.A 1/3 c 2011 ROHM Co., Ltd. All rights reserved. 1.6 2.8 0.3~0.6 2SA2092 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 60 V IC= 1mA Collector-base breakdown voltage BVCBO 60 V IC= 100A BVEBO 6 V IE= 100A Emitter-base breakdown voltage Collector cut-off current 1.0 A VCB= 40V ICBO Emitter cut-off current IEBO 1.0 A VEB= 4V Collector-emitter saturation voltage VCE(sat) 200 500 mV IC= 500mA, IB= 50mA DC current gain 3 120 270 VCE= 2V, IC= 100mA hFE 1 Transition frequency fT 300 MHz VCE= 10V, IE=100mA, f=10MHz Collector output capacitance Cob 15 pF VCB= 10V, IE=0, f=1MHz Turn-on time ns ton 30 IC= 1A, IB1= 100mA Storage time tstg 100 ns IB2=100mA ns 2 Fall time tf 30 VCC 25V 1 Pulse measurement 2 See switching test circuit 3 hFE rank hFE RANK Q 120-270 Electrical characteristic curves 200 1000 10 1000A VCE=2V VCE=2V 900A 800A 125C 700A 160 600A 100 1 25C 40C 500A 120 125C 25C 400A 80 300A 40C 10 0.1 200A 40 100A 1 IB=0A 0 0.01 0.001 0.01 0.1 1 10 01 2 34 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VEB (V) Fig.3 DC current gain vs. collector Fig.2 Typical output characteristics Fig.1 Grounded emitter propagation current ( ) characteristics 1000 10 10 Ta=25C IC/IB=10/1 Ta=25C VCE=5V 1 100 1 VCE=3V VCE=2V 125C 0.1 10 0.1 25C IC/IB=20/1 40C IC/IB=10/1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current ( ) vs. collector current () current () www.rohm.com 2011.03 - Rev.A 2/3 c 2011 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat)(V)