X-On Electronics has gained recognition as a prominent supplier of 2SA2092TLQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2092TLQ Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2092TLQ ROHM

2SA2092TLQ electronic component of ROHM
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Part No.2SA2092TLQ
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP BJT PNP 60V 1A 3PIN
Datasheet: 2SA2092TLQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.135 ea
Line Total: USD 0.68 
Availability - 2652
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2652
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 5
Multiples : 5
5 : USD 0.135
50 : USD 0.1191
150 : USD 0.1122
500 : USD 0.0872
3000 : USD 0.0833
6000 : USD 0.081

2793
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3691
10 : USD 0.3002
100 : USD 0.2047
1000 : USD 0.1219
3000 : USD 0.1046
9000 : USD 0.0978
24000 : USD 0.0978
45000 : USD 0.0931

2871
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 575
Multiples : 1
575 : USD 0.1708
1000 : USD 0.1654
2500 : USD 0.1604

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the 2SA2092TLQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2092TLQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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0~0.1 1A / 60V Bipolar transistor 2SA2092 Features Dimensions (Unit : mm) 1) High speed switching. (tf : Typ. : 30ns at IC = 1A) TSMT3 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 1.0MAX 2.9 3) Strong discharge resistance for inductive load and 0.85 0.7 capacitance load. 0.4 4) Low switching noise. ( ) 3 Applications ( ) ( ) 1 2 High-speed switching, low frequency amplification 0.95 0.95 0.16 (1) Base 1.9 (2) Emitter Each lead has same dimensions (3) Collector Abbreviated symbol : VN Structure PNP epitaxial planar silicon transistor Packaging specifications Package TSMT3 Packaging type Taping TL Code Part No. Basic ordering unit (pieces) 3000 2SA2092 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V DC IC 1 A Collector current 1 ICP 2 A PULSE 2 Power dissipation PC 500 mW Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw=10ms 2 Each terminal mounted on a recommended land www.rohm.com 2011.03 - Rev.A 1/3 c 2011 ROHM Co., Ltd. All rights reserved. 1.6 2.8 0.3~0.6 2SA2092 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 60 V IC= 1mA Collector-base breakdown voltage BVCBO 60 V IC= 100A BVEBO 6 V IE= 100A Emitter-base breakdown voltage Collector cut-off current 1.0 A VCB= 40V ICBO Emitter cut-off current IEBO 1.0 A VEB= 4V Collector-emitter saturation voltage VCE(sat) 200 500 mV IC= 500mA, IB= 50mA DC current gain 3 120 270 VCE= 2V, IC= 100mA hFE 1 Transition frequency fT 300 MHz VCE= 10V, IE=100mA, f=10MHz Collector output capacitance Cob 15 pF VCB= 10V, IE=0, f=1MHz Turn-on time ns ton 30 IC= 1A, IB1= 100mA Storage time tstg 100 ns IB2=100mA ns 2 Fall time tf 30 VCC 25V 1 Pulse measurement 2 See switching test circuit 3 hFE rank hFE RANK Q 120-270 Electrical characteristic curves 200 1000 10 1000A VCE=2V VCE=2V 900A 800A 125C 700A 160 600A 100 1 25C 40C 500A 120 125C 25C 400A 80 300A 40C 10 0.1 200A 40 100A 1 IB=0A 0 0.01 0.001 0.01 0.1 1 10 01 2 34 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VEB (V) Fig.3 DC current gain vs. collector Fig.2 Typical output characteristics Fig.1 Grounded emitter propagation current ( ) characteristics 1000 10 10 Ta=25C IC/IB=10/1 Ta=25C VCE=5V 1 100 1 VCE=3V VCE=2V 125C 0.1 10 0.1 25C IC/IB=20/1 40C IC/IB=10/1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current ( ) vs. collector current () current () www.rohm.com 2011.03 - Rev.A 2/3 c 2011 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat)(V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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