X-On Electronics has gained recognition as a prominent supplier of 2SA2119KT146 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2119KT146 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2119KT146 ROHM

2SA2119KT146 electronic component of ROHM
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See Product Specifications
Part No.2SA2119KT146
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 500 mA 260MHz 200 mW Surface Mount SMT3
Datasheet: 2SA2119KT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3718 ea
Line Total: USD 0.37 
Availability - 2094
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 2SA2119KT146 More Buying Options & Price Grid(s)

Availability Price Quantity
2094
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3718
10 : USD 0.2365
100 : USD 0.121
1000 : USD 0.1188
3000 : USD 0.0935
99000 : USD 0.0902

2813
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 323
Multiples : 1
323 : USD 0.4332

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 323
Multiples : 1
323 : USD 0.3159
500 : USD 0.3045
1000 : USD 0.2945
2500 : USD 0.2858
5000 : USD 0.2781

5660
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 269
Multiples : 1
269 : USD 0.1512
500 : USD 0.1292
1000 : USD 0.1226
2000 : USD 0.1145

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2119KT146 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2119KT146 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SA2030 / 2SA2018 / 2SA2119K Datasheet Low frequency transistor(-12V, -500mA) llOutline Parameter Value SOT-723 SOT-416 V -12V CEO I -500mA C 2SA2030 2SA2018 (VMT3) (EMT3) llFeatures SOT-346 1)High current. 2)Collector-Emitter saturation voltage is low. V 250mA at I =-200mA/I =-10mA CE(sat) C B 2SA2119K (SMT3) llApplication LOW FREQUENCY AMPLIFIER, DRIVER llInner circuit 2SA2030 2SA2018/2SA2119K llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SA2030 1212 T2L 180 8 8000 BW (VMT3) SOT-416 2SA2018 1616 TL 180 8 3000 BW (EMT3) SOT-346 2SA2119K 2928 T146 180 8 3000 BW (SMT3) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/8 20150910 - Rev.003 2SA2030 / 2SA2018 / 2SA2119K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO Collector-emitter voltage V -12 V CEO V Emitter-base voltage -6 V EBO I -500 mA C Collector current *1 I -1 A CP 2SA2030 150 *2 P Power dissipation 2SA2018 150 mW D 2SA2119K 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E Collector cut-off current I V = -15V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -200mA, I = -10mA - -100 -250 mV CE(sat) C B h DC current gain V = -2V, I = -10mA 270 - 680 - FE CE C V = -2V, I = 10mA, CE E f Transition frequency - 260 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 6.5 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20150910 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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