X-On Electronics has gained recognition as a prominent supplier of 2SA933ASTPQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA933ASTPQ Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA933ASTPQ ROHM

2SA933ASTPQ electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SA933ASTPQ
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP 50V 0.15A
Datasheet: 2SA933ASTPQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.0463 ea
Line Total: USD 231.5 
Availability - 0
MOQ: 5000  Multiples: 1
Pack Size: 1

 2SA933ASTPQ More Buying Options & Price Grid(s)

Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 5000
Multiples : 1
5000 : USD 0.0463
10000 : USD 0.045
15000 : USD 0.0444

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA933ASTPQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA933ASTPQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors Outline VMT3 EMT3F Parameter Value Collector Collector V 50V CEO Base Base I 150mA C Emitter Emitter 2SA2029 2SA1774EB (SC-105AA) (SC-89) Features EMT3 UMT3F 1) General Purpose. Collector Collector 2) Complementary NPN Types : Base Base 2SC5658 (VMT3) / 2SC4617EB (EMT3F) Emitter / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) Emitter / 2SC4081 (UMT3) / 2SC2412 (SMT3) 2SA1576UB 2SA1774 (SC-85) SOT-416 (SC-75A) 3) Complex transistors : UMT3 SMT3 EMT1 / EMT2 / EMT3 (EMT6) Collector Collector / UMT1N / UMT2N (UMT6) Base Base / IMT1A / IMT2A / IMT3A (SMT6) Emitter 4) Lead Free/RoHS Compliant. Emitter 2SA1037AK 2SA1576A SOT-323 (SC-70) SOT-346 (SC-59) Inner circuit Collector Applications Switching circuit, LED driver circuit Base Emitter Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) *1 2SA2029 VMT3 1212 T2L 180 8 8,000 Fx *1 2SA1774EB EMT3F 1616 TL 180 8 3,000 Fx *1 2SA1774 EMT3 1616 TL 180 8 3,000 Fx *1 2SA1576UB UMT3F 2021 TL 180 8 3,000 Fx *1 2SA1576A UMT3 2021 T106 180 8 3,000 Fx *1 2SA1037AK SMT3 2928 T146 180 8 3,000 Fx *1 x : h rank FE www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.11 - Rev.B 1/12Data Sheet 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Absolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V V Collector-base voltage 60 CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 6 V EBO *1 I 200 mA CP Collector current I mA 150 C 2SA2029 2SA1774EB 150 mW 2SA1774 *2 Power dissipation P D 2SA1576UB 2SA1576A 200 mW 2SA1037AK T Junction temperature 150 C j T Range of storage temperature 55 to 150 C stg Electrical characteristics(Ta = 25 C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 50 -- V CEO C breakdown voltage Collector-base BV I = 50A 60 - -V CBO C breakdown voltage Emitter-base BV I = 50A 6 -- V EBO E breakdown voltage I V = 60V Collector cut-off current -- 100 nA CBO CB I V = 6V Emitter cut-off current -- 100 nA EBO EB Collector-emitter V I = 50mA, I = 5mA -- V 0.5 CE(sat) C B saturation voltage DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = 2mA CE E Transition frequency f - 140 - MHz T f=100MH Z V = 12V, I = 0mA CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz *1 P =10ms Single Pulse W *2 Each terminal mounted on a reference footprint h rank categories FE Rank Q R S h 120 to 270 180 to 390 270 to 560 FE www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.11 - Rev.B 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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RHM
ROHM Semicon
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