2SAR293P FRA Datasheet Middle Power Transistor (-30V / -1A) AEC-Q101 Qualified llOutline SOT-89 Parameter Value SC-62 V -30V CEO I -1A C MPT3 llFeatures llInner circuit Low saturation voltage V =-350mV(Max.)(l /l =-500mA/-25mA) CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SAR293P FRA 4540 T100 180 12 1000 ML (MPT3) www.rohm.com 1/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs2SAR293P FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E Collector cut-off current I V = -30V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB *4 Collector-emitter saturation voltage I = -500mA, I = -25mA - -150 -350 mV V C B CE(sat) DC current gain h V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E *4 Transition frequency - 320 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz I = -500mA, C t Turn-On time - 60 - ns on I = -25mA, B1 I = 25mA, B2 t Storage time - 160 - ns stg V -5V, CC R = 10 L Fall time t - 50 - ns f See test circuit *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic bored.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs