2SAR375P5 Datasheet PNP -1.5A -120V Middle Power Transistor llOutline SOT-89 Parameter Value SC-62 V -120V CEO I -1.5A C MPT3 llFeatures llInner circuit 1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR375P5 3) Low V CE(sat) V =-320mV(Max.)(I /I =-800A/-80mA) CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SAR375P5 4540 T100 180 12 1000 GW (MPT3) www.rohm.com 1/6 20190107 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2SAR375P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -120 V CBO V Collector-emitter voltage -120 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3.0 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E Collector cut-off current I V = -100V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage V I = -800mA, I = -80mA - -160 -320 mV C B CE(sat) *4 DC current gain h V = -5V, I = -200mA 120 - 390 - CE C FE V = -10V, I = 400mA, CE E *4 Transition frequency f - 280 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 25 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20190107 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.