X-On Electronics has gained recognition as a prominent supplier of 2SAR375P5T100R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR375P5T100R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SAR375P5T100R ROHM

2SAR375P5T100R electronic component of ROHM
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Part No.2SAR375P5T100R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP -1.5A-120V L. Freq Amplifier
Datasheet: 2SAR375P5T100R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5951 ea
Line Total: USD 0.6 
Availability - 4397
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 2SAR375P5T100R More Buying Options & Price Grid(s)

Availability Price Quantity
4397
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5951
10 : USD 0.5049
100 : USD 0.3608
500 : USD 0.2948
1000 : USD 0.2541
2000 : USD 0.2453
5000 : USD 0.2453
10000 : USD 0.2343

Specifications

   
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We are delighted to provide the 2SAR375P5T100R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR375P5T100R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SAR375P5 Datasheet PNP -1.5A -120V Middle Power Transistor llOutline SOT-89 Parameter Value SC-62 V -120V CEO I -1.5A C MPT3 llFeatures llInner circuit 1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR375P5 3) Low V CE(sat) V =-320mV(Max.)(I /I =-800A/-80mA) CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SAR375P5 4540 T100 180 12 1000 GW (MPT3) www.rohm.com 1/6 20190107 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2SAR375P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -120 V CBO V Collector-emitter voltage -120 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3.0 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E Collector cut-off current I V = -100V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage V I = -800mA, I = -80mA - -160 -320 mV C B CE(sat) *4 DC current gain h V = -5V, I = -200mA 120 - 390 - CE C FE V = -10V, I = 400mA, CE E *4 Transition frequency f - 280 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 25 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20190107 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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