X-On Electronics has gained recognition as a prominent supplier of 2SAR502EBTL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR502EBTL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SAR502EBTL ROHM

2SAR502EBTL electronic component of ROHM
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See Product Specifications
Part No.2SAR502EBTL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 500 mA 520MHz 150 mW Surface Mount EMT3F (SOT-416FL)
Datasheet: 2SAR502EBTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
906: USD 0.0449 ea
Line Total: USD 40.68 
Availability - 7379
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ: 906  Multiples: 1
Pack Size: 1

 2SAR502EBTL More Buying Options & Price Grid(s)

Availability Price Quantity
7379
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 906
Multiples : 1
906 : USD 0.0449
1000 : USD 0.0447
2000 : USD 0.0395
3000 : USD 0.0377
6000 : USD 0.0356

1522
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 794
Multiples : 1
794 : USD 0.1237
1000 : USD 0.1197

1382
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 794
Multiples : 1
794 : USD 0.1237
1000 : USD 0.1197

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SAR502EBTL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR502EBTL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SAR502EB / 2SAR502UB / 2SAR502U3 Datasheet PNP 500mA 30V General purpose transistors llOutline Parameter Value SOT-416FL SOT-323FL V -30V CEO I -0.5A C 2SAR502EB 2SAR502UB (EMT3F) (UMT3F) llFeatures SOT-323 1)General purpose. 2)Complementary NPN types : 2SCR502EB(EMT3F)/2SCR502UB(UMT3F) /2SCR502U3(UMT3) 3)Collector current is large. 4)Low V . CE(sat) 2SAR502U3 llApplication (UMT3) LOW FREQUENCY AMPLIFIER llInner circuit 2SAR502EB/2SAR502UB 2SAR502U3 llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416FL 2SAR502EB 1616 TL 180 8 3000 LT (EMT3F) SOT-323FL 2SAR502UB 2021 TL 180 8 3000 LT (UMT3F) SOT-323 2SAR502U3 2021 T106 180 8 3000 LT (UMT3) www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/8 20180802 - Rev.003 2SAR502EB / 2SAR502UB / 2SAR502U3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO Collector-emitter voltage V -30 V CEO V Emitter-base voltage -6 V EBO *1 I -0.5 A C Collector current *2 I -1 A CP Base current I -0.15 A B 2SAR502EB 200 *3 P Power dissipation 2SAR502UB 200 mW D 2SAR502U3 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage Emitter-base breakdown voltage BV I = -100A -6 - - V EBO E I Collector cut-off current V = -25V - - -200 nA CBO CB I Emitter cut-off current V = -4V - - -200 nA EBO EB Collector-emitter saturation voltage V I = -200mA, I = -10mA - -150 -400 mV CE(sat) C B DC current gain h V = -2V, I = -100mA 200 - 500 - FE CE C V = -10V, I = 100mA, CE E *4 Transition frequency - 520 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 4 - pF ob f = 1MHz *1 Limited by power dissipation. *2 Pw=10ms, Single pulse. *3 Each terminal mounted on a reference land. *4 Pulsed www.rohm.com 2/7 20180802 - Rev.003 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
ROHM Semicon
ROHM Semiconductor

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