2SAR513R Datasheet PNP -1.0A -50V Middle Power Transistor llOutline SOT-346T Parameter Value SC-96 V -50V CEO I -1A C TSMT3 llFeatures llInner circuit 1)Suitable for Middle Power Driver 2)Complementary NPN Types:2SCR513R 3)Low V CE(sat) V =-400mV(Max.) CE(sat) (I /I =-500A/-25mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346T 2SAR513R 2928 TL 180 8 3000 MC (TSMT3) www.rohm.com 1/6 20160107 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.2SAR513R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E Collector cut-off current I V = -50V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage I = -500mA, I = -25mA - -200 -400 mV V C B CE(sat) DC current gain h V = -2V, I = -50mA 180 - 450 - FE CE C V = -10V, I = 200mA, CE E *4 Transition frequency - 400 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz I = -500mA, C t Turn-On time - 40 - ns on I = -50mA, B1 I = 50mA, B2 t Storage time - 250 - ns stg V -10V, CC R = 20 L Fall time t - 35 - ns f See test circuit *1 PW=10ms ,Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). *4 Pulsed www.rohm.com 2/6 20160107 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.