2SAR514P FRA Datasheet Middle Power Transistor (-80V / -0.7A) AEC-Q101 Qualified llOutline SOT-89 Parameter Value SC-62 V -80V CEO I -0.7A C MPT3 llFeatures llInner circuit 1)Low saturation voltage V =-400mV (Max.) CE(sat) (I / I =-300mA/-15mA) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SAR514P FRA 4540 T100 180 12 1000 MD (MPT3) www.rohm.com 1/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs2SAR514P FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -80 V CBO V Collector-emitter voltage -80 V CEO V Emitter-base voltage -6 V EBO I -0.7 A C Collector current *1 I -1.4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -80 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -80 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -80V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -300mA, I = -15mA - -200 -400 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 120 - 390 - FE CE C V = -10V, I = 200mA, CE E f Transition frequency - 380 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 10 - pF ob f = 1MHz I = -350mA, C t Turn-On time - 50 - ns on I = -35mA, B1 I = 35mA, B2 Storage time t - 350 - ns stg V -10V, CC R = 27 L t Fall time - 50 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) www.rohm.com 2/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs