X-On Electronics has gained recognition as a prominent supplier of 2SAR514PFRAT100 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR514PFRAT100 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SAR514PFRAT100 ROHM

2SAR514PFRAT100 electronic component of ROHM
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Part No.2SAR514PFRAT100
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP SOT-89 -0.7A 120 to 390hFE -80V
Datasheet: 2SAR514PFRAT100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5371 ea
Line Total: USD 0.54 
Availability - 834
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 2SAR514PFRAT100 More Buying Options & Price Grid(s)

Availability Price Quantity
834
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5371
10 : USD 0.3396
100 : USD 0.2264
1000 : USD 0.2218
100000 : USD 0.2218

Specifications

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Msl
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SAR514PFRAT100 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR514PFRAT100 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SAR514P FRA Datasheet Middle Power Transistor (-80V / -0.7A) AEC-Q101 Qualified llOutline SOT-89 Parameter Value SC-62 V -80V CEO I -0.7A C MPT3 llFeatures llInner circuit 1)Low saturation voltage V =-400mV (Max.) CE(sat) (I / I =-300mA/-15mA) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SAR514P FRA 4540 T100 180 12 1000 MD (MPT3) www.rohm.com 1/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs2SAR514P FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -80 V CBO V Collector-emitter voltage -80 V CEO V Emitter-base voltage -6 V EBO I -0.7 A C Collector current *1 I -1.4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -80 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -80 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -80V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -300mA, I = -15mA - -200 -400 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 120 - 390 - FE CE C V = -10V, I = 200mA, CE E f Transition frequency - 380 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 10 - pF ob f = 1MHz I = -350mA, C t Turn-On time - 50 - ns on I = -35mA, B1 I = 35mA, B2 Storage time t - 350 - ns stg V -10V, CC R = 27 L t Fall time - 50 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) www.rohm.com 2/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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