X-On Electronics has gained recognition as a prominent supplier of 2SAR514PT100 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR514PT100 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SAR514PT100 ROHM

2SAR514PT100 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SAR514PT100
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP BJT PNP 80V 0.7A 4PIN MPT
Datasheet: 2SAR514PT100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

248: USD 0.1642 ea
Line Total: USD 40.72

Availability - 771
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 248  Multiples: 1
Pack Size: 1
Availability Price Quantity
771
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 248
Multiples : 1
248 : USD 0.1642
500 : USD 0.1529

648
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 562
Multiples : 1
562 : USD 0.1807

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SAR514PT100 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR514PT100 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline MPT3 Parameter Value V -80V CEO Base Collector I -0.7A C Emitter 2SAR514P lFeatures (SC-62) <SOT-89> 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low V CE(sat) V = -0.4V(Max.) CE(sat) (I /I = -300mA/ -15mA) C B 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SAR514P MPT3 4540 T100 180 12 1,000 MD lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage -80 V CBO V Collector-emitter voltage -80 V CEO V V Emitter-base voltage -6 EBO I A DC -0.7 C Collector current *1 A Pulsed I -1.4 CP *2 0.5 W P D Power dissipation *3 2.0 W P D T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg *1 Pw=10ms , single pulse *2 Each terminal mounted on a reference land *3 Mounted on a ceramic board (40400.7mm) www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 1/6 Not Recommended for New DesignsData Sheet 2SAR514P lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = -1mA - - V -80 CEO C breakdown voltage Collector-base BV I = -100 mA -80 - - V CBO C breakdown voltage Emitter-base BV I = -100 mA -6 - - V EBO E breakdown voltage I Collector cut-off current V = -80V - - -1 mA CBO CB I V = -4V Emitter cut-off current - - -1 mA EBO EB Collector-emitter *1 I = -300mA, I = -15mA V - -0.20 -0.40 V C B CE(sat) saturation voltage h V = -3V, I = -100mA DC current gain 120 - 390 - FE CE C V = -10V, I = -200mA CE E Transition frequency f - 380 - MHz T f=100MH Z V = -10V, I = 0A, CB E Output capacitance C - 10 - pF ob f = 1MHz *2 Turn-on time - 50 - ns t on I = -0.35A C I = -35mA B1 *2 Storage time - 350 - ns t stg I =35mA B2 V -10V *2 CC Fall time t - 50 - ns f *1 Pulsed *2 See switching time test circuit lSwitching time test circuit www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 2/6 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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