X-On Electronics has gained recognition as a prominent supplier of 2SAR522MT2L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR522MT2L Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SAR522MT2L ROHM

2SAR522MT2L electronic component of ROHM
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Part No.2SAR522MT2L
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP General Purpose Amplification Transistor
Datasheet: 2SAR522MT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2508 ea
Line Total: USD 0.25 
Availability - 5507
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 2SAR522MT2L More Buying Options & Price Grid(s)

Availability Price Quantity
5507
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2508
10 : USD 0.1551
100 : USD 0.0715
1000 : USD 0.0627
2500 : USD 0.0605
8000 : USD 0.0418
24000 : USD 0.0396
48000 : USD 0.0374
96000 : USD 0.0352

5575
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 475
Multiples : 1
475 : USD 0.0857
500 : USD 0.0819
1000 : USD 0.0774
2000 : USD 0.0772

3660
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 2500
Multiples : 1
2500 : USD 0.0369

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SAR522MT2L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR522MT2L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SAR522M / 2SAR522EB / 2SAR522UB PNP -200mA -20V General purpose transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -20V CEO I -200mA C 2SAR522M 2SAR522EB (VMT3) (EMT3F) SOT-323FL 2SAR522UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary NPN Types: 2SCR522M(VMT3)/ 2SCR522EB(EMT3F)/ 2SCR522UB(UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SAR522M 1212 T2L 180 8 8000 PC (VMT3) SOT-416FL 2SAR522EB 1616 TL 180 8 3000 PC (EMT3F) SOT-323FL 2SAR522UB 2021 TL 180 8 3000 PC (UMT3F) www.rohm.com 1 / 8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SAR522M / 2SAR522EB / 2SAR522UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -20 V CBO Collector-emitter voltage V -20 V CEO V Emitter-base voltage -5 V EBO I -200 mA C Collector current *1 I -400 mA CP 2SAR522M 150 *2 P Power dissipation 2SAR522EB 150 mW D 2SAR522UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -20 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -20 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -20V - - -100 nA CBO CB Emitter cut-off current I V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -120 -300 mV CE(sat) C B h DC current gain V = -2V, I = -1mA 120 - 560 - FE CE C V = -10V, I = 10mA, CE E f Transition frequency - 350 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 3.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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