X-On Electronics has gained recognition as a prominent supplier of 2SAR523MT2L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR523MT2L Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SAR523MT2L ROHM

2SAR523MT2L electronic component of ROHM
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See Product Specifications
Part No.2SAR523MT2L
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP General Purpose Amplification Transistor
Datasheet: 2SAR523MT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0324 ea
Line Total: USD 0.65 
Availability - 6136
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
6136
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0324
200 : USD 0.0262
600 : USD 0.0227
2000 : USD 0.0207
8000 : USD 0.0189
16000 : USD 0.0178

8796
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2046
10 : USD 0.1353
100 : USD 0.0616
1000 : USD 0.0517
8000 : USD 0.0396
24000 : USD 0.0374
48000 : USD 0.0363
96000 : USD 0.0352

7611
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 878
Multiples : 1
878 : USD 0.2777

7520
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 356
Multiples : 1
356 : USD 0.1143
500 : USD 0.0995
1000 : USD 0.0879
2000 : USD 0.0781

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SAR523MT2L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR523MT2L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SAR523M / 2SAR523EB / 2SAR523UB PNP -100mA -50V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -50V CEO I -100mA C 2SAR523M 2SAR523EB (VMT3) (EMT3F) SOT-323FL 2SAR523UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary NPN Types: 2SCR523M (VMT3) / 2SCR523EB (EMT3F) / 2SCR523UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SAR523M 1212 T2L 180 8 8000 PB (VMT3) SOT-416FL 2SAR523EB 1616 TL 180 8 3000 PB (EMT3F) SOT-323FL 2SAR523UB 2021 TL 180 8 3000 PB (UMT3F) www.rohm.com 1 / 8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SAR523M / 2SAR523EB / 2SAR523UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO Collector-emitter voltage V -50 V CEO V Emitter-base voltage -5 V EBO I -100 mA C Collector current *1 I -200 mA CP 2SAR523M 150 *2 P Power dissipation 2SAR523EB 150 mW D 2SAR523UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - -150 -400 mV CE(sat) C B h DC current gain V = -6V, I = -1mA 120 - 560 - FE CE C V = -10V, I = 10mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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