X-On Electronics has gained recognition as a prominent supplier of 2SAR542F3TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR542F3TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SAR542F3TR ROHM

2SAR542F3TR electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SAR542F3TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 3 A 240MHz 2.1 W Surface Mount HUML2020L3
Datasheet: 2SAR542F3TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5348 ea
Line Total: USD 0.53

Availability - 2641
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2641
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.5348
10 : USD 0.4623
100 : USD 0.3496
500 : USD 0.2829
1000 : USD 0.2242
3000 : USD 0.207
9000 : USD 0.1886
24000 : USD 0.1863
45000 : USD 0.1828

387
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 382
Multiples : 1
382 : USD 0.5286

2425
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 382
Multiples : 1
382 : USD 0.5286
500 : USD 0.4891
1000 : USD 0.4731
2500 : USD 0.4592

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SAR542F3TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR542F3TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SAR542F3 Datasheet PNP -3.0A -30V Middle Power Transistor llOutline DFN2020-3S Parameter Value V -30V CEO I -3A C HUML2020L3 llFeatures llInner circuit 1) Suitable for Middle Power Driver. 2) Low V CE(sat) V =-200mV(Max.). CE(sat) (I /I =-1A/-50mA) C B 3) High collector current. I =-3A(max),I =-6A(max) C CP 4) Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity. llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) DFN2020-3S 2SAR542F3 2020 TR 180 8 3000 MQ (HUML2020L3) www.rohm.com 1/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.2SAR542F3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -3 A C Collector current *1 I -6 A CP I Base current -0.5 A B *2 P 1.0 W D Power dissipation *3 P 2.1 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV I = -100A Emitter-base breakdown voltage -6 - - V EBO E I V = -30V Collector cut-off current - - -100 nA CBO CB I V = -4V Emitter cut-off current - - -100 nA EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - -90 -200 mV CE(sat) C B h V = -2V, I = -500mA DC current gain 200 - 500 - FE CE C V = -10V, I = 100mA, CE E f Transition frequency - 240 - MHz T f = 100MHz V = -10V, I = 0A, CB E Output capacitance C - 40 - pF ob f = 1MHz I = -2.5A, t C Turn-On time - 45 - ns on I = -250mA, B1 I = 250mA, B2 t Storage time - 200 - ns stg V -10V, CC R = 3.9 L t Fall time - 25 - ns f See test circuit *1 Pw=1ms Single Pulse 2 *2 Mounted on FR4 board(25.425.41.6mm, Cu PAD645mm ). 2 *3 Pw=10s Mounted on FR4 board(25.425.41.6mm, Cu PAD645mm ). www.rohm.com 2/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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