2SAR552P Datasheet Midium Power Transistors (-30V / -3A) llOutline Parameter Value MPT3 V -30V CEO I -3A C SOT-89 SC-62 llFeatures 1)Low saturation voltage, typically llInner circuit V =-0.4V (Max.) CE(sat) (I /I =-1A/-50mA) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SAR552P MPT3 4540 T100 180 12 1000 MF www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.2SAR552P Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -3 A C Collector current *1 I -6 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E Collector cut-off current I V = -30V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage I = -1A, I = -50mA - -200 -400 mV V C B CE(sat) DC current gain h V = -2V, I = -500mA 200 - 500 - FE CE C V = -10V, I = 100mA, CE E *4 Transition frequency - 330 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 25 - pF ob f = 1MHz I = -1.5A, C t Turn-On time - 35 - ns on I = -150mA, B1 I = 150mA, B2 t Storage time - 210 - ns stg V -10V, CC R = 6.7 L Fall time t - 15 - ns f See test circuit *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.