2SAR553RTL ROHM

2SAR553R PNP -2.0A -50V Middle Power Transistor Datasheet llOutline SOT-346T Parameter Value SC-96 V -50V CEO I -2A C TSMT3 llFeatures llInner circuit 1)Suitable for Middle Power Driver 2)Complementary NPN Types:2SCR553R 3)Low V CE(sat) V =-400mV(Max.) CE(sat) (I /I =-700mA/-35mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-346T 2SAR553R 2928 TL 180 8 3000 MG (TSMT3) www.rohm.com 1/6 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.2SAR553R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I -2 A C Collector current *1 I -4 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -100A -6 - - V EBO E I Collector cut-off current V = -50V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage I = -700mA, I = -35mA V - -200 -400 mV C B CE(sat) h DC current gain V = -2V, I = -50mA 180 - 450 - FE CE C V = -10V, I = 300mA, CE E *4 Transition frequency f - 320 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 22 - pF ob f = 1MHz I = -1A, C t Turn-On time - 45 - ns on I = -100mA, B1 I = 100mA, B2 t Storage time - 220 - ns stg V -10V, CC R = 10 L t Fall time - 35 - ns f See test circuit *1 P =10ms, Single pulse W *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board( 40400.7mm). *4 Pulsed www.rohm.com 2/6 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.