2SAR586J FRG PNP -5.0A -80V Power Transistor Datasheet llOutline TO-263AB Parameter Value V -80V CEO I -5A C LPTL llFeatures llInner circuit 1) Suitable for Power Driver. 2) Complementary NPN Types : 2SCR586J FRG 3) Low V CE(sat ) V =-320mV(Max.).(I /I =-2A/-100mA) CE(sat) C B 4) AEC-Q101 Qualified llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Taping Reel size Tape width Quantity Part No. Package Marking code (mm) (mm) (pcs) LPTL 2SAR586J FRG TLL 330 24 1000 AR586 (TO-263AB) www.rohm.com 1/6 20190423 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. 2SAR586J FRG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -80 V CBO V Collector-emitter voltage -80 V CEO Emitter-base voltage V -6 V EBO I -5 A C Collector current *1 I -10 A CP *2 P Power dissipation 40 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -100A -80 - - V CBO C Collector-emitter breakdown BV I = -1mA -80 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -80V - - -1 A CBO CB Emitter cut-off current I V = -4V - - -1 A EBO EB *3 Collector-emitter saturation voltage I = -2A, I = -100mA - -160 -320 mV V C B CE(sat) *3 V = -3V, I = -500mA DC current gain h 120 - 390 - CE C FE V = -10V, I = 500mA, CE E *3 Transition frequency - 200 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 100 - pF ob f = 1MHz Turn-On time t I = -2.5A, - 40 - ns on C I = -250mA, B1 I = 250mA, B2 Storage time t - 350 - ns stg V -10V, CC R = 3.9 L t Fall time - 80 - ns f See test circuit *1 Pw=10ms Single Pulse *2 Tc=25 *3 Pulsed www.rohm.com 2/6 20190423 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.