2SAR587D3 Datasheet PNP -3.0A -120V Power Transistor llOutline Parameter Value DPAK V -120V CEO I -3A C TO-252 llFeatures llInner circuit 1) Suitable for Power Driver. 2) Complementary PNP Types : 2SCR587D3. 3) Low V CE(sat) V =-200mV(Max.). CE(sat) (I /I =-1A/-100mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Taping Reel size Tape width Part No. Package ordering Marking code (mm) (mm) unit.(pcs) TL1 TO-252 2SAR587D3 330 16 2500 2SAR587D3 (DPAK) TL www.rohm.com 1/7 20181213 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2SAR587D3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -120 V CBO V Collector-emitter voltage -120 V CEO Emitter-base voltage V -6 V EBO I -3 A C Collector current *1 I -6 A CP *2 P Power dissipation 10 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -100A -120 - - V CBO C Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -100V - - -1 A CBO CB Emitter cut-off current I V = -4V - - -1 A EBO EB *3 Collector-emitter saturation voltage I = -1A, I = -100mA - -100 -200 mV V C B CE(sat) *3 V = -5V, I = -100mA DC current gain h 120 - 390 - CE C FE V = -10V, I = 1A, CE E *3 Transition frequency - 250 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 65 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Tc=25 *3 Pulsed www.rohm.com 2/7 20181213 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.