X-On Electronics has gained recognition as a prominent supplier of 2SARA41CHZGT116R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SARA41CHZGT116R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SARA41CHZGT116R ROHM

2SARA41CHZGT116R electronic component of ROHM
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Part No.2SARA41CHZGT116R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT HV AMP TRANSISTOR -120V -50M
Datasheet: 2SARA41CHZGT116R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5764 ea
Line Total: USD 0.58 
Availability - 5752
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5752
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.3586
100 : USD 0.1793
1000 : USD 0.1628
3000 : USD 0.1364
9000 : USD 0.1188
24000 : USD 0.1166
45000 : USD 0.1155
99000 : USD 0.1144

   
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RoHS - XON
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We are delighted to provide the 2SARA41CHZGT116R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SARA41CHZGT116R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SARA41C HZG High-voltage Amplifier Transistor Datasheet (-120V,-50mA) AEC-Q101 Qualified llOutline SOT-23 Parameter Value V -120V CEO I -50mA C SST3 llFeatures llInner circuit 1)High breakdown voltage. (BV =-120V) CEO 2)Complements the 2SCRC41C HZG. llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 2SARA41C HZG 2924 T116 180 8 3000 K1 (SST3) www.rohm.com 1/6 20181106 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2SARA41C HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -120 V CBO V Collector-emitter voltage -120 V CEO V Emitter-base voltage -5 V EBO I Collector current -50 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -100V Collector cut-off current - - -500 nA CBO CB I V = -4V Emitter cut-off current - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -500 mV CE(sat) C B h DC current gain V = -6V, I = -2mA 180 - 560 - FE CE C V = -12V, I = 2mA, CE E Transition frequency f - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 3.2 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20181106 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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