X-On Electronics has gained recognition as a prominent supplier of 2SB1132T100R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1132T100R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1132T100R ROHM

Hot 2SB1132T100R electronic component of ROHM
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Part No.2SB1132T100R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 32V 1A
Datasheet: 2SB1132T100R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1142 ea
Line Total: USD 0.11

Availability - 1
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.1142
10 : USD 0.1118
30 : USD 0.11
100 : USD 0.1084

226
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4083
10 : USD 0.3531
100 : USD 0.2484
500 : USD 0.199
1000 : USD 0.161
2000 : USD 0.1438
10000 : USD 0.1414
25000 : USD 0.1392
50000 : USD 0.1357

803
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 352
Multiples : 1
352 : USD 0.1157
500 : USD 0.1105

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the 2SB1132T100R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1132T100R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515S VCE(sat) = 0.2V(Typ.) + 4 0.2 2 0.2+ +0.2 4.5 0.1 (IC / IB = 500mA / 50mA) +0.2 1.5 + 1.6 0.1 0.1 2) Compliments 2SD1664 / 2SD1858 +0.15 (1) (2) (3) 0.45 0.05 +0.1 0.4 Structure 0.05 + + 0.4 0.1 0.5 0.1 0.4 0.1 Epitaxial planar type + + 1.5 0.1 1.5 0.1 +0.15 +0.4 + 2.5 0.45 PNP silicon transistor 3.0 0.2 0.5 0.05 0.1 5 (1) (2) (3) (1) Base (1) Emitter ROHM : MPT3 (2) Collector ROHM : SPT (2) Collector EIAJ : SC-62 (3) Emitter EIAJ : SC-72 (3) Base Abbreviated symbol: BA 2SB1237 + 2.5 0.2 + 6.8 0.2 0.65Max. + 0.5 0.1 (1) (2) (3) 2.54 2.54 + 1.05 0.45 0.1 (1) Emitter ROHM : ATV (2) Collector (3) Base Denotes hFE www.rohm.com 2009.12 - Rev.C 1/4 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs + 4.0 0.3 +0.2 2.5 + + 1.0 0.2 0.1 0.5 0.1 1.0 0.9 + + 14.5 0.5 4.4 0.2 + (15Min.) 3 0.2 3Min.+ + 2SB1132 / 2SA1515S / 2SB1237 Data Sheet Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V 1 A(DC) Collector current IC 2 A(Pulse) 1 0.5 2SB1132 2 2 Collector power W PC dissipation 2SA1515S 0.3 3 2SB1237 1 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=100ms 2 When mounted on a 40 40 0.7 mm ceramic board. 2 3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm or larger. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 VIC= 50A Collector-emitter breakdown voltage BVCEO 32 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 50A Collector cutoff current ICBO 0.5 A VCB= 20V Emitter cutoff current IEBO 0.5 A VEB= 4V Collector-emitter saturation voltage VCE(sat) 0.2 0.5 V IC/IB= 500mA/50mA 2SB1132, 2SB1237 120 390 DC current hFE VCE= 3V, IC= 0.1A transfer ratio 2SA1515S 120 390 Transition frequency fT 150 MHz VCE= 5V, IE=50mA, f=30MHz Output capacitance Cob 20 30 pF VCB= 10V, IE=0A, f=1MHz Measured using pulse current. Packaging specifications and hFE Package Taping T100 TP TU2 Code hFE 1000 5000 2500 Type Basic ordering unit (pieces) 2SB1132 QR 2SA1515S QR 2SB1237 QR hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 www.rohm.com 2009.12 - Rev.C 2/4 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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