X-On Electronics has gained recognition as a prominent supplier of 2SB1275TLP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1275TLP Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1275TLP ROHM

Hot 2SB1275TLP electronic component of ROHM
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See Product Specifications
Part No.2SB1275TLP
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT PNP 160V 1.5A
Datasheet: 2SB1275TLP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

94: USD 0.4355 ea
Line Total: USD 40.94

Availability - 7007
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 94  Multiples: 1
Pack Size: 1
Availability Price Quantity
65
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 1.0005
10 : USD 0.8303
100 : USD 0.6659
500 : USD 0.5808
1000 : USD 0.4853
2500 : USD 0.4634
5000 : USD 0.4634
10000 : USD 0.4462
25000 : USD 0.4451

1789
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 133
Multiples : 1
133 : USD 0.8003
250 : USD 0.7682
500 : USD 0.7405
1000 : USD 0.7163

2425
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 133
Multiples : 1
133 : USD 0.8003
250 : USD 0.7682
500 : USD 0.7405
1000 : USD 0.7163
2500 : USD 0.6951

7007
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 94
Multiples : 1
94 : USD 0.4355
102 : USD 0.3997
200 : USD 0.3883
500 : USD 0.3737
1000 : USD 0.3592
2500 : USD 0.3412
5000 : USD 0.3315

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the 2SB1275TLP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1275TLP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline CPT3 Collector Parameter Value V -160V CEO I -1.5A Base C Emitter 2SB1275 lFeatures (SC-63) 1) Suitable for Middle Power Driver <SOT-428> 2) Complementary NPN Types : 2SD1918 3) High voltage : V = -160V CEO 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SB1275 CPT3 6595 TL 330 16 2,500 B1275 www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.C 1/6Data Sheet 2SB1275 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage -160 V CBO V Collector-emitter voltage -160 V CEO V Emitter-base voltage -5 V EBO I DC -1.5 A C Collector current *1 -3.0 A Pulsed I CP *2 1 W P D Power dissipation *3 10 W P D T 150 C Junction temperature j T Range of storage temperature -55 to +150 C stg *1 Pw=100ms , single pulse *2 Mounted on a substrate *3 Tc=25C lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = -1mA -160 - - V CEO C breakdown voltage Collector-base BV I = -50 mA -160 - - V CBO C breakdown voltage Emitter-base BV I = -50 mA -5 - - V EBO E breakdown voltage Collector cut-off current I V = -120V - - -1 mA CBO CB Emitter cut-off current I V = -4V - - -1 mA EBO EB Collector-emitter *4 I = -1A, I = -0.1A - - V V -2 C B CE(sat) saturation voltage h DC current gain V = -5V, I = -100mA 82 - 180 - FE CE C V = -5V, I = 100mA CE E f Transition frequency - 50 - MHz T f=30MH Z V = -10V, I = 0A, CB E C Output capacitance - 30 - pF ob f = 1MHz *4 Pulsed lh rank categories FE Rank P h 82 to 180 FE www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.C 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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