2SB1412TLP ROHM

Low frequency transistor (20V,5A) 2SB1412 z Features z Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1412 VCE(sat) = 0.35V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. z Structure Epitaxial planar type PNP silicon transistor (1) Base ROHM : CPT3 (2) Collector EIAJ : SC-63 (3) Emitter Denotes hFE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V 5 A(DC) IC Collector current 10 A(Pulse) 1 Collector power 1 W 2SB1412 PC dissipation 10 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C 1 Single pulse, Pw=10ms z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 VIC= 50A Collector-emitter breakdown voltage BVCEO 20 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 50A Collector cutoff current ICBO 0.5 A VCB= 20V Emitter cutoff current IEBO 0.5 A VEB= 5V Collector-emitter saturation voltage VCE(sat) 0.35 1.0 V IC/IB= 4A/ 0.1A hFE 82 390 VCE= 2V, IC= 0.5A DC current transfer ratio Transition frequency fT 120 MHz VCE= 6V, IE=50mA, f=100MHz Output capacitance Cob 60 pF VCB= 20V, IE=0A, f=1MHz Measured using pulse current. www.rohm.com 2009.12 - Rev.C 1/3 c 2009 ROHM Co., Ltd. All rights reserved. VCE= 5V 2SB1412 Data Sheet z Packaging specifications and hFE Package Taping Code TL Basic ordering 2500 unit (pieces) Type hFE 2SB1412 PQR hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 z Electrical characteristic curves 5k 10 5 50mA VCE= 2V Ta=25C Ta=25C 5 45mA 2k 40mA 2 4 35mA Ta=100C 1k 1 25C 15mA 25C 500m 500 3 200m 200 10mA 100m 100 2V 50m 2 1V 50 20m 5mA 10m 1 20 5m 10 2m IB=0A 5 1m 0 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.2 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Grounded emitter output Fig.3 DC current gain vs. Fig.1 Grounded emitter propagation characteristics collector current ( ) characteristics 5k 5k 5 VCE= 1V VCE= 2V Ta=25C 2k 2k 2 1k 1k 1 500 500 0.5 200 200 0.2 Ta=100C IC/IB=50/1 100 100 Ta=100C 25C 40/1 /1 25C 0.1 30/1 25C 50 50 25C 10/1 0.05 20 20 10 10 0.02 5 5 0.01 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 2m 5m 0.0 -0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation collector current ( ) collector current ( ) voltage vs. collector current ( ) 5 5 5 lC/lB=10 lC/lB=30 lC/lB=40 2 2 2 25C 25C 1 1 1 Ta=100C 25C 0.5 0.5 0.5 0.2 0.2 0.2 0.1 0.1 0.1 Ta=100C Ta=100C 0.05 0.05 0.05 25C 25C 0.02 0.02 0.02 0.01 0.01 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 2m 5m 0.010.02 0.05 0.1 0.2 0.5 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 1 2 5 10 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation Fig.8 Collector-emitter saturation Fig.9 Collector-emitter saturation voltage vs. collector current ( ) voltage vs. collector current ( ) voltage vs. collector current ( ) www.rohm.com 2009.12 - Rev.C 2/3 c 2009 ROHM Co., Ltd. All rights reserved. 25C 20mA 25mA 30mA DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE