2SB1424T100Q ROHM

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (20V, 3A) 2SB1424 / 2SA1585S z External dimensions (Unit : mm) z Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = 0.2V (Typ.) 40.2 20.2 +0.2 4.5 (IC/IB = 2A / 0.1A) 0.1 1.50.1 1.60.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. +0.15 0.45 (1) (2) (3) 0.05 +0.1 0.4 0.05 0.40.1 0.50.1 0.40.1 1.50.1 1.50.1 +0.4 +0.15 z Structure 2.5 0.45 3.00.2 0.1 0.5 0.05 5 Epitaxial planar type PNP silicon transistor (1) Base (1) (2) (3) ROHM : MPT3 (2) Collector (1) Emitter EIAJ : SC-62 (3) Emitter ROHM : SPT (2) Collector EIAJ : SC-72 (3) Base Abbreviated symbol: AE Denotes hFE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V 2SB1424 3 IC A Collector current 2SA1585S 2 ICP 5 A(Pulse) 0.5 2SB1424 Collector power PC W dissipation 2SA1585S 0.4 Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Single pulse Pw=10ms Rev.A 1/3 4.00.3 +0.2 2.5 1.00.2 0.1 0.50.1 (15Min.) 30.2 3Min.2SB1424 / 2SA1585S Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 20 VIC= 50A Collector-emitter breakdown voltage BVCEO 20 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 50A Collector cutoff current ICBO 0.1 A VCB= 20V Emitter cutoff current IEBO 0.1 A VEB= 5V Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB= 2A/ 0.1A DC current transfer ratio hFE 120 390 VCE= 2V, IC= 0.1A Transition frequency fT 240 MHz VCE= 2V, IE=0.5A, f=100MHz Output capacitance Cob 35 pF VCB= 10V, IE=0A, f=1MHz z Packaging specifications and hFE hFE values are classified as follows : Package Taping Item Q R Code TP T100 hFE 120 to 270 180 to 390 Basic ordering 5000 1000 Type hFE unit (pieces) 2SA1585S QR 2SB1424 QR z Electrical characteristic curves 2.0 5 10 Ta=25C VCE= 2V Ta=25C 20mA 5 50mA 18mA 45mA 2 12mA 1.6 4 Ta=100C 1 10mA 0.5 25C 1.2 8mA 3 0.2 40C 0.1 6mA 0.05 0.8 2 4mA 0.02 0.01 2mA 5mA 0.4 1 5m 2m I =0A IB=0A 0 B 1m 0 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : V (V) BASE TO EMITTER VOLTAGE : VBE (V) CE COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics characteristics ( ) characteristics ( ) Rev.A 2/3 15mA 25mA 10mA 35mA 20mA 30mA 14mA 40mA 16mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : I (A) C COLLECTOR CURRENT : IC (A)