2SB1561T100Q ROHM

2SB1561 Datasheet Middle Power Transistor (-60V/-2A) llOutline SOT-89 Parameter Value SC-62 V -60V CEO I -2A C MPT3 llFeatures llInner circuit 1)Low saturation voltage, tipically V =-150mV at I /I =-1A/-50mA. CE(sat) C B 2)Collector-emitter voltage=-60V 3)P =2W (Mounted on a ceramic board D (40400.7mm) ). 4)Complementary NPN Types : 2SD2391 llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SB1561 4540 T100 180 12 1000 BL (MPT3) www.rohm.com 1/6 20160112 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SB1561 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO Collector-emitter voltage V -60 V CEO V Emitter-base voltage -6 V EBO I -2 A C Collector current *1 I -6 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -60 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -6 - - V EBO E I Collector cut-off current V = -50V - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB *4 Collector-emitter saturation voltage I = -1A, I = -50mA V - -150 -350 mV C B CE(sat) *4 V = -2V, I = -500mA 82 170 270 h 1 CE C FE DC current gain - *4 V = -2V, I = -1.5A h 2 45 - - CE C FE V = -2V, I = -500mA, CE E *3 Transition frequency - 200 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 23 - pF ob f = 1MHz hFE values are calssified as follows : rank P Q - - - h 1 82-180 120-270 - - - FE *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20160112 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.