2SB1706TL ROHM

0~0.1 2SB1706 Transistors Low frequency amplifier 2SB1706 z External dimensions (Unit : mm) z Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) z Features 1) A collector current is large. ( ) (2) 2) V -370mV 1 CE(sat) 0.95 0.95 0.16 At lc= -1.5A / l = -75mA B 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO 30 V Collector-base voltage Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 Power dissipation PC 500 mW Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms 2 Each Terminal Mounted on a Recommended z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC= 10A Collector-emitter breakdown voltage BVCEO 30 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff curent ICBO 100 nA VCB= 30V Emitter cutoff current IEBO 100 nA VEB= 6V Collector-emitter saturation voltage VCE(sat) 180 370 mV IC= 1.5A, IB= 75mA FE 270 680 DC current gain h VCE= 2V, IC= 200mA Transition frequency fT 280 MHz VCE= 2V, IE=200mA, f=100MHz VCB= 10V, IE=0A, f=1MHz Collector output capacitance Cob 20 pF 20190527-Rev.E 1/2 1.6 2.8 0.3~0.62SB1706 Transistors z Packaging specifications package Taping Type Code TL Quantity (pcs) 3000 2SB1706 z Electrical characteristic curves 1000 10 10 VCE= 2V IC/IB=20/1 Ta=25 C Pulsed Pulsed Pulsed Ta=100 C Ta=25 C 1 Ta=40 C 100 1 IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 0.1 Ta=40 C Ta=25 C Ta=100 C 10 0.01 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage Fig.3 Base-emitter saturation voltage Fig.1 DV current gain vs. collector current vs. collectir current vs. collector current 10 1000 10000 VBE=2V Ta=25 C Ta=25 C Pulsed VCE= 2V VCE= 12V f=100MHz IC/IB=20/1 Pulsed 1000 Ta=100 C tstg Ta=25 C 1 Ta=40 C 100 100 tf tdon 0.1 10 tr 1 0.01 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter curent 1000 IC=0A f=1MHz Cib Ta=25 C 100 Cob 10 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VBE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 20190527-Rev.E 2/2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : hFE COLLECTOR CURRENT :IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) SWITCHINGTIME : (ns) BASE SATURATION VOLTAGE : VBE(sat) (V)