X-On Electronics has gained recognition as a prominent supplier of 2SB1707TL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1707TL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1707TL ROHM

2SB1707TL electronic component of ROHM
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See Product Specifications
Part No.2SB1707TL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 4 A 250MHz 500 mW Surface Mount TSMT3
Datasheet: 2SB1707TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
486: USD 0.2098 ea
Line Total: USD 101.96 
Availability - 2395
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ: 486  Multiples: 1
Pack Size: 1

 2SB1707TL More Buying Options & Price Grid(s)

Availability Price Quantity
2395
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 486
Multiples : 1
486 : USD 0.2098
500 : USD 0.2023
1000 : USD 0.1956

8613
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 158
Multiples : 1
158 : USD 0.2585
200 : USD 0.2567
500 : USD 0.2292
1000 : USD 0.221
2000 : USD 0.2194
3000 : USD 0.213
6000 : USD 0.2048

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1707TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1707TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SB1707 General purpose amplification(-12V,-4A) Datasheet llOutline SOT-346T Parameter Value SC-96 V -12V CEO I -4A C TSMT3 llFeatures llInner circuit 1) Collector current is large. (4A) 2) V -250mV CE(sat) at I = -2A / I = -40mA C B 3) Complementary NPN Types : 2SD2672 llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-346T 2SB1707 2928 TL 180 8 3000 YW (TSMT3) www.rohm.com 1/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. 2SB1707 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -12 V CEO V Emitter-base voltage -6 V EBO I -4 A C Collector current *1 I -8 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -15V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -2A, I = -40mA - -150 -250 mV CE(sat) C B h DC current gain V = -2V, I = -200mA 270 - 680 - FE CE C V = -2V, I = 200mA, CE E Transition frequency f - 250 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 60 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8 mm). www.rohm.com 2/6 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.003

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
ROHM Semicon
ROHM Semiconductor

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