X-On Electronics has gained recognition as a prominent supplier of 2SB1708TL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1708TL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1708TL ROHM

Hot 2SB1708TL electronic component of ROHM
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See Product Specifications
Part No.2SB1708TL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 3 A 200MHz 500 mW Surface Mount TSMT3
Datasheet: 2SB1708TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2576 ea
Line Total: USD 1.29 
Availability - 2910
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2910
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2576
50 : USD 0.226
150 : USD 0.2125
500 : USD 0.1956
3000 : USD 0.1644
6000 : USD 0.16

2786
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3634
10 : USD 0.3556
100 : USD 0.3533
500 : USD 0.3522
1000 : USD 0.3489
3000 : USD 0.3076
6000 : USD 0.3076
9000 : USD 0.2953
24000 : USD 0.2943

11924
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 162
Multiples : 1
162 : USD 0.2442
200 : USD 0.2425
500 : USD 0.2158
1000 : USD 0.2079
2000 : USD 0.2064
3000 : USD 0.2001
6000 : USD 0.1922
12000 : USD 0.1843

2910
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 241
Multiples : 1
241 : USD 0.4852

2152
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 241
Multiples : 1
241 : USD 0.4852

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1708TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1708TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1708 General purpose amplification(-30V,-3A) Datasheet llOutline SOT-346T Parameter Value SC-96 V -30V CEO I -3A C TSMT3 llFeatures llInner circuit 1) Collector current is large.(3A) 2) V -250mV CE(sat) at I = -1.5A / I = -30mA C B . llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-346T 2SB1708 2928 TL 180 8 3000 YY (TSMT3) www.rohm.com 1/6 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved. 2SB1708 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -3 A C Collector current *1 I -6 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -30V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -1.5A, I = -30mA - -180 -250 mV CE(sat) C B h DC current gain V = -2V, I = -200mA 270 - 680 - FE CE C V = -2V, I = 200mA, CE E Transition frequency f - 200 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 40 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8 mm). www.rohm.com 2/6 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.004

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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