X-On Electronics has gained recognition as a prominent supplier of 2SB1709TL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1709TL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB1709TL ROHM

2SB1709TL electronic component of ROHM
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See Product Specifications
Part No.2SB1709TL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 1.5 A 400MHz 500 mW Surface Mount TSMT3
Datasheet: 2SB1709TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 0.1625 ea
Line Total: USD 40.62 
Availability - 2512
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 250  Multiples: 1
Pack Size: 1
Availability Price Quantity
2027
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 556
Multiples : 1
556 : USD 0.4154

2512
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 250
Multiples : 1
250 : USD 0.1625
500 : USD 0.1495
1000 : USD 0.1451
2000 : USD 0.1391

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1709TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1709TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1709 General purpose amplification (-12V, -1.5A) Datasheet llOutline SOT-346T Parameter Value SC-96 V -12V CEO I -1.5A C TSMT3 llFeatures llInner circuit 1)A collector current is large. 2)Collector saturation voltage is low. V -200mV CE(sat) at I =-500mA/I = -25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-346T 2SB1709 2928 TL 180 8 3000 EV (TSMT3) www.rohm.com 1/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. 2SB1709 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -12 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -15V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -85 -200 mV CE(sat) C B h DC current gain V = -2V, I = -200mA 270 - 680 - FE CE C V = -2V, I = 200mA, CE E Transition frequency f - 400 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each Terminal Mounted on a Reference Land *3 Mounted on a ceramic board.(25250.8mm) www.rohm.com 2/6 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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