High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbbCc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 Packaging specifications and hFE Type 2SC4726 2SC4083 2SC3838K 2SC5662 2SC4726 1.6 0.7 Package VMT3 EMT3 UMT3 SMT3 0.3 0.55 hFE NP NP NP NP ( ) 3 Marking AD AD 1D AD ( ) ( ) 2 1 T2L TL T106 T146 0.2 0.2 Code 0.15 0.5 0.5 Basic ordering unit (1) Emitter 1.0 8000 3000 3000 3000 ROHM : EMT3 (2) Base (pieces) EIAJ : SC-75A (3) Collector 2.0 0.9 2SC4083 0.3 0.2 0.7 (3) Absolute maximum ratings (Ta=25C) (2) (1) Parameter Symbol Limits Unit (1) Emitter 0.65 0.65 (2) Base 0.15 Collector-base voltage VCBO 20 V 1.3 (3) Collector ROHM : UMT3 Collector-emitter voltage VCEO 11 V EIAJ : SC-70 Each lead has same dimensions Emitter-base voltage VEBO 3 V 2.9 1.1 2SC3838K Collector current IC 50 mA 0.4 0.8 2SC5662, 2SC4726 0.15 Collector power PC W ( ) 3 dissipation 2SC4083, 2SC3838K 0.2 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C ( ) ( ) 2 1 (1) Emitter 0.95 0.95 (2) Base 0.15 (3) Collector ROHM : SMT3 1.9 EIAJ : SC-59 Each lead has same dimensions Absolute maximum ratings (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 20 V IC = 10A Collector-emitter breakdown voltage BVCEO 11 V IC = 1mA Emitter-base breakdown voltage BVEBO 3 V IE = 10A Collector cutoff current ICBO 0.5 A VCB = 10V Emitter cutoff current IEBO 0.5 A VEB = 2V Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB = 10mA/5mA DC current 2SC5662, 2SC4726, hFE 56 180 VCE/IC = 10V/5mA transfer ratio 2SC4083, 2SC3838K Transition frequency fT 1.4 3.2 GHz VCE = 10V , IE = 10mA , f = 500MHz Output capacitance Cob 0.8 1.5 pF VCB = 10V , IE = 0A , f = 1MHz rbb Cc 412 ps VCB = 10V , IC = 10mA , f = 31.8MHz Collector-base time constant Noise factor NF 3.5 dB VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50 This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 2010.01 - Rev.D 1/2 c 2010 ROHM Co., Ltd. All rights reserved. 0.8 1.25 0.2 0.8 0.2 1.6 1.2 1.6 2.1 2.8 0.1Min. 0.1Min. 0.3Min. 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Data Sheet Electric characteristics curves 500 500 5.0 Ta=25C Ta=25C VCE=10V 200 200 2.0 100 100 1.0 50 50 0.5 IC/IB=10 20 20 0.2 IC/IB=2 Ta=25C VCE=10V 10 10 0.1 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage Fig.3 Gain bandwidth product vs. collector current vs. emitter current 5.0 Ta=25C 50 Ta=25C Ta=25C VCE=6V f=1MHz VCE=10V f=500MHz IE=0A f=31.8MHz 20 2.0 20 1.0 10 Cob Cre 10 0.5 5.0 0.2 2.0 0 0.1 1.0 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (mA) Fig.6 Noisfactor vs. Fig.4 Capacitance vs. reverse bias voltage Fig.5 Collector to base time constance collector current characteristics vs. collector current www.rohm.com 2010.01 - Rev.D 2/2 c 2010 ROHM Co., Ltd. All rights reserved. OUTPUT CAPACITANCE : Cob (pF) DC CURRENT TRANSFER RATIO : hFE FEEDBACK CAPACITANCE : Cre (pF) COLLECTOR TO BASE TIME CONSTANT : Cc rbb (ps) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) NOISE FIGURE : NF (dB) TRANSITIONFREQUENCY : fT (GHz)