2SC3838K High-Frequency Amplifer Transistor (11V, 50mA, 3.2GHz) Datasheet llOutline SOT-346 Parameter Value SC-59 V 11V CEO I 50mA C SMT3 llFeatures llInner circuit 1)High transition frequency.(Typ. f =3.2GHz) T 2)Small rbb Cc and high gain.(Typ.4ps) 3)Small NF. llApplication UHF FREQUENCY CONVERTER, LOCAL OSCILLATOR llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SC3838K 2928 T146 180 8 3000 AD (SMT3) llNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 1/6 20150909 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SC3838K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 20 V CBO V Collector-emitter voltage 11 V CEO V Emitter-base voltage 3 V EBO I Collector current 50 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 11 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 3 - - V EBO E I Collector cut-off current V = 10V - - 500 nA CBO CB I Emitter cut-off current V = 2V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 5mA - - 500 mV CE(sat) C B DC current gain h V = 10V, I = 5mA 56 - 270 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f 1.4 3.2 - GHz T f = 500MHz V = 10V, I = 0A, CB E C Output capacitance - 0.8 1.5 pF ob f = 1MHz V = 6V, I = 2mA CB C N Noise figure - 3.5 - dB F f = 500MHz, R = 50 g hFE values are calssified as follows : rank N P Q - - h 56-120 82-180 120-270 - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20150909 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.