2SC4097 Datasheet Medium Power Transistor (32V, 500mA) llOutline Parameter Value UMT3 V 32V CEO I 500mA C SOT-323 SC-70 llFeatures 1)High I llInner circuit CMax. I =0.5A CMax. 2)Low V . CE(sat) Optimal for low voltage operation. 3)Complements the 2SA1577. llApplication DRIVING CIRCUIT,LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SC4097 UMT3 2021 T106 180 8 3000 C www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SC4097 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 40 V CBO V Collector-emitter voltage 32 V CEO V Emitter-base voltage 5 V EBO I Collector current 500 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 40 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 32 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 5 - - V EBO E Collector cut-off current I V = 20V - - 1.0 A CBO CB Emitter cut-off current I V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 50mA - - 600 mV CE(sat) C B DC current gain h V = 3V, I = 10mA 120 - 390 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 6.5 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.002