X-On Electronics has gained recognition as a prominent supplier of 2SC4102T106R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4102T106R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4102T106R ROHM

2SC4102T106R electronic component of ROHM
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See Product Specifications
Part No.2SC4102T106R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 120 V 50 mA 140MHz 200 mW Surface Mount UMT3
Datasheet: 2SC4102T106R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0579 ea
Line Total: USD 0.29 
Availability - 1329
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5

 2SC4102T106R More Buying Options & Price Grid(s)

Availability Price Quantity
1329
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0579
50 : USD 0.0474
150 : USD 0.0421
500 : USD 0.0382
3000 : USD 0.0351
6000 : USD 0.0336

54
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.3003
100 : USD 0.1507
1000 : USD 0.1298
3000 : USD 0.1067
9000 : USD 0.0968
24000 : USD 0.0968
45000 : USD 0.0913

1639
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 5
Multiples : 5
5 : USD 0.2128
25 : USD 0.1204
100 : USD 0.1092
205 : USD 0.084
560 : USD 0.0798

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4102T106R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4102T106R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC4102 / 2SC3906K Datasheet High-voltage Amplifier Transistor (120V, 50mA) llOutline Parameter Value SOT-323 SOT-346 V 120V CEO I 50mA C 2SC4102 2SC3906K (UMT3) (SMT3) llFeatures llInner circuit 1)High breakdown voltage. (BV =120V) CEO 2)Complements the 2SA1579/2SA1514K. llApplication HIGH-VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width hFE Part No. Package ordering Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SC4102 2021 T106 180 8 3000 RS T (UMT3) SOT-346 2SC3906K 2928 T146 180 8 3000 RS T (SMT3) www.rohm.com 1/7 20170203 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. 2SC4102 / 2SC3906K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 120 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 100V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 500 mV CE(sat) C B h V = 6V, I = 2mA DC current gain 180 - 560 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.5 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/7 20170203 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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