X-On Electronics has gained recognition as a prominent supplier of 2SC4102U3HZGT106R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4102U3HZGT106R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4102U3HZGT106R ROHM

2SC4102U3HZGT106R electronic component of ROHM
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Part No.2SC4102U3HZGT106R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT H. Volt 120V, 50mA UMT3
Datasheet: 2SC4102U3HZGT106R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4689 ea
Line Total: USD 0.47 
Availability - 5742
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 2SC4102U3HZGT106R More Buying Options & Price Grid(s)

Availability Price Quantity
5742
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4689
10 : USD 0.2991
100 : USD 0.1571
1000 : USD 0.1444
3000 : USD 0.1155
9000 : USD 0.1051
24000 : USD 0.1016

Specifications

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4102U3HZGT106R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4102U3HZGT106R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC4102U3HZG Datasheet High-voltage Amplifier Transistor (120V, 50mA) AEC-Q101 Qualified llOutline SOT-323 Parameter Value SC-70 V 120V CEO I 50mA C UMT3 llFeatures llInner circuit 1)High breakdown voltage. (BV =120V) CEO 2)Complements the 2SA1579U3 HZG llApplication HIGH-VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 2SC4102U3HZG 2021 T106 180 8 3000 T (UMT3) www.rohm.com 1/6 20181029 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. 2SC4102U3HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 120 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 100V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 500 mV CE(sat) C B DC current gain h V = 6V, I = 2mA 180 - 560 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.5 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2018 ROHM Co., Ltd. All rights reserved. 20181029 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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