2SC4102U3HZG Datasheet High-voltage Amplifier Transistor (120V, 50mA) AEC-Q101 Qualified llOutline SOT-323 Parameter Value SC-70 V 120V CEO I 50mA C UMT3 llFeatures llInner circuit 1)High breakdown voltage. (BV =120V) CEO 2)Complements the 2SA1579U3 HZG llApplication HIGH-VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 2SC4102U3HZG 2021 T106 180 8 3000 T (UMT3) www.rohm.com 1/6 20181029 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. 2SC4102U3HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 120 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 100V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 500 mV CE(sat) C B DC current gain h V = 6V, I = 2mA 180 - 560 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.5 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2018 ROHM Co., Ltd. All rights reserved. 20181029 - Rev.002