X-On Electronics has gained recognition as a prominent supplier of 2SC4102U3T106S Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4102U3T106S Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4102U3T106S ROHM

Name: 2SC4102U3T106S
Brand: ROHM
SKU: 2SC4102U3T106S_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

2SC4102U3T106S electronic component of ROHM

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Part No.	2SC4102U3T106S
Manufacturer:	ROHM
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT Transistor H. Volt Amplifier
Datasheet:	2SC4102U3T106S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5411 ea
Line Total: USD 0.54

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

2SC4102U3T106S More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 26 Dec to Mon. 30 Dec MOQ : 1 Multiples : 1	1 : USD 0.5411 10 : USD 0.4091 100 : USD 0.236 500 : USD 0.1634 1000 : USD 0.1295 3000 : USD 0.1162 9000 : USD 0.1022 24000 : USD 0.0976 45000 : USD 0.0953

We are delighted to provide the 2SC4102U3T106S from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4102U3T106S and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SCRC41C / 2SC4102U3 Datasheet High-voltage Amplifier Transistor (120V, 50mA) llOutline Parameter Value SOT-23 SOT-323 V 120V CEO I 50mA C 2SCRC41C 2SC4102U3 (SST3) (UMT3) llFeatures llInner circuit 1)High breakdown voltage. (BV =120V) CEO 2)Complements the 2SARA41C/2SA1579U3. llApplication HIGH-VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 2SCRC41C 2924 T116 180 8 3000 K2 (SST3) SOT-323 2SC4102U3 2021 T106 180 8 3000 T (UMT3) www.rohm.com 1 / 7 20181227 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. 2SCRC41C / 2SC4102U3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 P 200 mW D 2SCRC41C *2 P Power dissipation 350 mW D *1 P 2SC4102U3 200 mW D Junction temperature T 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I V = 100V Collector cut-off current - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 500 mV CE(sat) C B h V = 6V, I = 2mA DC current gain 180 - 560 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.5 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20181227 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Technology Si Si
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 23 - 3 SOT - 23 - 3
Transistor Polarity Npn Npn
Configuration Single Single
Maximum DC Collector Current 50 mA 50 mA
Collector- Emitter Voltage VCEO Max 120 V 120 V
Collector- Base Voltage VCBO 120 V 120 V
Emitter- Base Voltage VEBO 5 V 5 V
Collector-Emitter Saturation Voltage 500 mV 500 mV
Pd - Power Dissipation 200 mW 200 mW
Gain Bandwidth Product fT 140 Mhz 140 Mhz
Maximum Operating Temperature + 150 C + 150 C
Packaging Cut Tape Cut Tape
Dc Current Gain Hfe Max 560 560
Brand Rohm Semiconductor Rohm Semiconductor
Continuous Collector Current 50 mA 50 mA
Dc Collector/Base Gain Hfe Min 180 180
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Factory Pack Quantity : 3000 3000
Subcategory Transistors Transistors