2SC4505T100Q ROHM

2SC4505 Transistors Power Transistor (400V, 0.1A) 2SC4505 z Dimensions (Unit : mm) z Features 1) High breakdown voltage. (BVCEO = 400V) MPT3 2) Low saturation voltage, 4.5 1.5 1.6 typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7s at Ic =100mA. 4) Complements the 2SC4505 and the 2SA1759. (1) (2) (3) 0.4 0.5 0.4 0.4 z Packaging specifications and hFE 1.5 1.5 3.0 (1)Base Type 2SC4505 (2)Collector Package MPT3 (3)Emitter hFE PQ Marking CE Code T100 Basic ordering unit (pieces) 1000 Denotes hFE z Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V 0.1 A (DC) Collector current IC 0.2 A (Pulse) 1 0.5 W Collector power dissipation PC 2 W 2 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=20ms, Duty=1/2 2 When mounted on a 40400.7mm ceramic board. z Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 400 V IC=50A Collector-emitter breakdown voltage BVCEO 400 V IC=1mA Emitter-base breakdown voltage BVEBO 7 V IE=50A Collector cutoff current ICBO 10 A VCB=400V Emitter cutoff current IEBO 10 A VEB=6V Collector-emitter saturation voltage VCE(sat) 0.05 0.5 V IC/IB=10mA/1mA Base-emitter saturation voltage VBE(sat) 1.5 V IC/IB=10mA/1mA DC current transfer ratio hFE 82 270 VCE=10V , IC=10mA Transition frequency fT 20 MHz VCE=10V , IE=10mA , f=10MHz Output capacitance Cob 7 pF VCB=10V , IE=0A , f=1MHz Turn-on time ton 1 sIC=100mA RL=1.5k Storage time tstg 5.5 sIB1=IB2=10mA Fall time tf 1.7 sVCC~150V Rev.D 1/3 0.5 1.0 2.5 4.02SC4505 Transistors z Electrical characteristics (Ta=25 C) 200 1 1000 Ta=25C VCE=3V Ta=25C 0.5 500 160 0.2 200 0.1 100 VCE=10V 120 0.05 50 5V 0.02 20 80 0.01 10 0.005 40 5 0.002 2 IB=0mA 0 0.001 1 02 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characterisitics Fig.3 DC current gain vs. collector current ( ) 1000 10 10 VCE=10V Ta=25C IC/IB=10 5 500 5 Ta=100C 25C 2 200 2 VBE(sat) 1 1 100 25C Ta=25C 0.5 0.5 50 25C 100C 0.2 0.2 20 IC/IB=20 0.1 10 0.1 Ta=100C 10 0.05 VCE(sat) 0.05 5 5 25C 25C 0.02 0.02 2 1 0.01 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage Fig.4 DC current gain vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current Collector-base saturation voltage vs. collector current 1000 1 1000 Ta=25C Ta=25C VCE=10V f=1MHz 500 500 IE=0A Ic Max. (Pulse) Pw=10m 200 200 Pw=1m 100 0.1 100 Pw=100m 50 50 DC 20 20 10 0.01 10 5 5 Ta=25C 2 2 Single nonrepetitive pulse 1 0.001 1 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Gain bandwidth product vs. emitter current Fig.9 Safe operating area Fig.8 Collector output capacitance vs. collector-base voltage Rev.D 2/3 2.0mA 1.5mA 1.0mA 0.5mA 2.5mA 3.0mA 3.5mA Ta=100C 25C 25C DC CURRENT GAIN : hEF COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR SATURATION VOLTAGE :VCE(sat) (V) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hEF BASE SATURATION VOLTAGE :VBE(sat) (V)