X-On Electronics has gained recognition as a prominent supplier of 2SC4617EBHZGTLQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4617EBHZGTLQ Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4617EBHZGTLQ ROHM

2SC4617EBHZGTLQ electronic component of ROHM
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Part No.2SC4617EBHZGTLQ
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 50V 0.15A 0.15W SOT-416FL
Datasheet: 2SC4617EBHZGTLQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2046 ea
Line Total: USD 0.2 
Availability - 6806
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 2SC4617EBHZGTLQ More Buying Options & Price Grid(s)

Availability Price Quantity
6806
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2046
10 : USD 0.1397
100 : USD 0.0638
1000 : USD 0.0583
3000 : USD 0.0462
9000 : USD 0.0396
24000 : USD 0.0396
45000 : USD 0.0396
99000 : USD 0.0363

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4617EBHZGTLQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4617EBHZGTLQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC4617EB HZG Datasheet General purpose small signal amplifier (50V, 150mA) AEC-Q101 Qualified llOutline SOT-416FL Parameter Value SC-89 V 50V CEO I 150mA C EMT3F llFeatures llInner circuit 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA1774EB HZG. llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT- 2SC4617EB HZG 416FL 1616 TL 180 8 3000 B (EMT3F) www.rohm.com 1/6 20151029 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SC4617EB HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 7 V EBO I 150 mA C Collector current *1 I 200 mA CP *2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 7 - - V EBO E Collector cut-off current I V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz hFE values are calssified as follows : rank Q R S - - h 120-270 180-390 270-560 - - FE *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20151029 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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