General purpose small signal amplifier (50V, 0.15A) 2SC4617EB z Features z Dimensions (Unit : mm) 1) Excellent hFE linearity. EMT3F 2) Complements the 2SA1774EB. 1.6 0.7 0.26 (3) z Structure NPN silicon epitaxial planar transistor (1) (2) 0.13 0.5 0.5 1.0 Each lead has same dimensions (1) Base (2) Emitter (3) Collector Abbreviated symbol : B = Denotes hFE z Absolute maximum (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V IC 150 Collector current mA 1 ICP 200 2 Power dissipation PD 150 mW Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw=1ms Single pulse 2 Each terminal mounted on a recommended land z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCEO 50 VIC=1mA Collector-emitter breakdown voltage BVCBO 60 V IC=50A Collector-base breakdown voltage Emitter-base breakdown voltage BVEBO 7 V IE=50A Collector cutoff current ICBO 100 nA VCB=60V Emitter cutoff current IEBO 100 nA VEB=7V Collector-emitter saturation voltage VCE(sat) 400 mV IC/IB=50mA/5mA hFE 82 560 VCE=6V, IC=1mA DC current gain fT 180 MHz VCE=12V, IE=2mA, f=100MHz Transition frequency Output capacitance Cob 2 3.5 pF VCE=12V, IE=0A, f=1MHz www.rohm.com 2009.03 - Rev.B 1/3 c 2009 ROHM Co., Ltd. All rights reserved. 1.6 0.37 0.86 0.37 0.45 0.45 2SC4617EB Data Sheet hFE rank categories Rank P Q R S hFE 82 to 180 120 to 270 180 to 390 270 to 560 z Electrical characterristic curves 0.50mA 100 50 10 Ta=25C 30A Ta=25C VCE=6V 27A 20 80 8 24A 0.30mA 10 21A 0.25mA 5 60 6 18A 0.20mA 15A 2 0.15mA 12A 40 4 1 9A 0.10mA 0.5 6A 20 2 0.05mA 3A 0.2 IB=0A IB=0A 0 0.1 0 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics characteristics ( ) characteristics ( ) 500 0.5 500 Ta=25C Ta=25C VCE=5V Ta=100C 0.2 25C VCE=5V 200 200 3V 55C IC/IB=50 1V 20 0.1 100 100 10 0.05 50 50 0.02 20 20 0.01 10 10 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig. 6 Collector-emitter saturation collector current ( ) collector current ( ) voltage vs. collector current 0.5 0.5 IC/IB=10 IC/IB=50 Ta=25C VCE=6V 500 0.2 Ta=100C 0.2 25C 55C Ta=100C 0.1 0.1 25C 55C 200 0.05 0.05 0.02 100 0.02 0.01 0.01 50 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation Fig.8 Collector-emitter saturation Fig.9 Gain bandwidth product vs. voltage vs. collector current ( ) voltage vs. collector current () emitter current www.rohm.com 2009.03 - Rev.B 2/3 c 2009 ROHM Co., Ltd. All rights reserved. 0.35mA 0.40mA 0.45mA 25C 55C Ta=100C DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA)