X-On Electronics has gained recognition as a prominent supplier of 2SC4774T106S Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4774T106S Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4774T106S ROHM

2SC4774T106S electronic component of ROHM
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Part No.2SC4774T106S
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN 6V 50MA
Datasheet: 2SC4774T106S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0415 ea
Line Total: USD 124.5 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
152
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5115
10 : USD 0.3454
100 : USD 0.2002
1000 : USD 0.1331
3000 : USD 0.0935
9000 : USD 0.0814
24000 : USD 0.0803
45000 : USD 0.077

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4774T106S from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4774T106S and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC4774 Datasheet High frequency amplifier transistor, RF switching (6V, 50mA) llOutline SOT-323 Parameter Value SC-70 V 6V CEO I 50mA C UMT3 llFeatures llInner circuit 1)Very Low output-on resistance (Ron). 2)Low capacitance. llApplication HIGH FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width hFE ordering Part No. Package Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SC4774 2021 T106 180 8 3000 RS BM (UMT3) llNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 1/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SC4774 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 12 V CBO V Collector-emitter voltage 6 V CEO V Emitter-base voltage 3 V EBO I Collector current 50 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 12 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 6 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 3 - - V EBO E I Collector cut-off current V = 10V - - 500 nA CBO CB I Emitter cut-off current V = 2V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 5mA 180 - 560 - FE CE C V = 5V, I = -10mA, CE E Transition frequency f 300 800 - MHz T f = 200MHz V = 10V, I = 0A, CB E C Output capacitance - 1.0 1.7 pF ob f = 1MHz V = 100mVrms, i R On resistance - 2.0 - on I = 3mA, f = 500kHz B hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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