2SC4774 Datasheet High frequency amplifier transistor, RF switching (6V, 50mA) llOutline SOT-323 Parameter Value SC-70 V 6V CEO I 50mA C UMT3 llFeatures llInner circuit 1)Very Low output-on resistance (Ron). 2)Low capacitance. llApplication HIGH FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width hFE ordering Part No. Package Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SC4774 2021 T106 180 8 3000 RS BM (UMT3) llNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 1/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SC4774 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 12 V CBO V Collector-emitter voltage 6 V CEO V Emitter-base voltage 3 V EBO I Collector current 50 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 12 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 6 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 3 - - V EBO E I Collector cut-off current V = 10V - - 500 nA CBO CB I Emitter cut-off current V = 2V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 5mA 180 - 560 - FE CE C V = 5V, I = -10mA, CE E Transition frequency f 300 800 - MHz T f = 200MHz V = 10V, I = 0A, CB E C Output capacitance - 1.0 1.7 pF ob f = 1MHz V = 100mVrms, i R On resistance - 2.0 - on I = 3mA, f = 500kHz B hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.